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A platinum diselenide in-plane puzzle structure material and its preparation and modulation method

A structural material and selenization technology, applied in the field of nanomaterials to achieve the effect of convenient application and development

Active Publication Date: 2020-02-11
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] Monolayer platinum diselenide (chemical formula: PtSe2) two-dimensional crystalline material is a new type of two-position transition metal dichalcogenide material that has been successfully prepared in recent years. Both theory and experiments have proved that its octahedral (T-type) is a stable structure. The type is a semiconductor with a band gap of 1.2eV, which has good photocatalytic properties; while its triangular prism type (H type) is a metal, which has not been reported yet.

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  • A platinum diselenide in-plane puzzle structure material and its preparation and modulation method
  • A platinum diselenide in-plane puzzle structure material and its preparation and modulation method
  • A platinum diselenide in-plane puzzle structure material and its preparation and modulation method

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[0033] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.

[0034] In this example, an in-plane jigsaw structure material of platinum diselenide crystalline material was prepared on the surface of a transition metal. The specific steps are: in a vacuum environment, deposit an appropriate amount of selenium atoms on the surface of a clean and flat platinum single crystal substrate. At this time, the platinum single crystal The temperature of the substrate was normal temperature. Then, the sample was annealed at 270 °C to form a large-area high-quality single-layer platinum diselenide crystalline material, which has two configurations, triangular prism configuration (H type) and octahedral configuration (T-...

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Abstract

The invention discloses a platinum diselenide (PtSe2) in-plane puzzle structure material, which simultaneously comprises two configurations: a triangular prism type configuration (H type) and an octahedron type configuration (T type). The triangular prism type configuration (H type) and the octahedron type configuration (T type) form a triangular structural domain, and the structural domain formedby the triangular prism type configuration (H type) and the structural domain formed by the octahedron type configuration (T-type) alternate with each other and periodically expand on the surface ofa substrate. The in-plane puzzle structure formed by the two configurations of a two-dimensional platinum diselenide crystalline material in large area is grown by a molecular beam epitaxy method andcan be modulated, thereby greatly facilitating the further study of application and development of the two-dimensional platinum diselenide crystalline material in the aspect of nanoelectronic devices.

Description

technical field [0001] The invention relates to an in-plane mosaic structure of a transition metal dichalcogenide two-dimensional crystal material and a preparation and modulation method thereof, belonging to the technical field of nanomaterials. Background technique [0002] The discovery of graphene, its superior physical properties and great application potential have inspired people to explore other two-dimensional atomic crystal materials and their structural regulation. With the development and progress of preparation methods of crystalline materials in recent years, people began to pay attention to other new two-dimensional atomic crystal materials with graphene-like properties. Transition metal dichalcogenides are one of them. Transition metal dichalcogenides have a layered structure similar to graphene, and their chemical formula is usually expressed as MX2, where M represents a transition metal element, and X represents a chalcogen element (sulfur, selenium and te...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G55/00
CPCC01G55/00C01P2004/04
Inventor 王业亮邵岩武旭朱诗雨王裕祺刘中流高鸿钧
Owner INST OF PHYSICS - CHINESE ACAD OF SCI