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Preparation method of silicon substrates on ceramic body

A technology of silicon substrate and ceramic body is applied in the field of preparation of silicon substrate on ceramic body to achieve the effect of simple process method and excellent high temperature resistance

Active Publication Date: 2018-02-23
苏州研材微纳科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no method for preparing SOC, so it is necessary to provide a substrate material and its preparation method that are reliable in process and can effectively ensure the reliability of SOC devices

Method used

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  • Preparation method of silicon substrates on ceramic body
  • Preparation method of silicon substrates on ceramic body
  • Preparation method of silicon substrates on ceramic body

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0024] Such as Figure 1 to Figure 4 Shown: in order to effectively prepare the silicon substrate on the ceramic body, the preparation method of the present invention comprises the following steps:

[0025] Step 1, providing the required first silicon substrate 1 and second silicon substrate 3, and performing the cleaning on the first silicon substrate 1 and the second silicon substrate 3;

[0026] Specifically, the first silicon substrate 1 and the second silicon substrate 3 can adopt existing commonly used silicon wafers, such as figure 1 shown. When cleaning the first silicon substrate 1 and the second silicon substrate 3, RCA standard cleaning is adopted. After cleaning the first silicon substrate 1 and the second silicon substrate 3, the first silicon substrate 1 can be effectively removed. , organic substances, metals and particles on the second silico...

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Abstract

The invention relates to a preparation method, in particular to a preparation method of silicon substrates on a ceramic body, and belongs to the technical field of silicon on the ceramic body. According to the technical scheme provided by the invention, the preparation method of the silicon substrates on the ceramic body comprises the following steps: step one, providing a first silicon substrateand a second silicon substrate which are required, and cleaning the first silicon substrate and the second silicon substrate; step two, uniformly coating a ceramic buried material layer on the first silicon substrate, wherein the ceramic buried material layer comprises polysilazane; step three, bonding the second silicon substrate onto the first silicon substrate, wherein the second silicon substrate is isolated from the first silicon substrate through the ceramic buried material layer; and step four, carrying out a ceramization technology on the ceramic buried material layer so as to obtain aceramic body insulating buried layer positioned between the first silicon substrate and the second silicon substrate. According to the preparation method, the silicon substrates on the ceramic body can be prepared and obtained effectively, so that the processing steps are simple, safe and reliable.

Description

technical field [0001] The invention relates to a preparation method, in particular to a method for preparing a silicon-on-ceramic substrate, belonging to the technical field of silicon-on-ceramic. Background technique [0002] Silicon-on-ceramic (SOC) refers to silicon on the ceramic insulating layer. It is a new type of silicon-based semiconductor material with a unique three-layer structure of "Si / ceramic layer / Si". Silicon on ceramic can be buried by ceramic insulation. The layer realizes the full dielectric isolation of the device and the substrate. Compared with bulk silicon, silicon-on-ceramic (SOC) materials and devices made of silicon-on-ceramic have the following advantages: 1), relatively steep sub-threshold slope; 2) , Has lower power consumption. Due to the reduction of parasitic capacitance and leakage, the power consumption of SOC devices can be reduced by 35-70%; 3), the latch-up effect is eliminated; 4), high transconductance and current drive capability; 5...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L27/12
CPCH01L21/76243H01L27/1203
Inventor 李瑾冒薇王丰梅杨静赵书平
Owner 苏州研材微纳科技有限公司
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