SONO etching technology with ultrahigh depth-to-width radio

A technology of aspect ratio and process, which is applied in the field of ultra-high aspect ratio etching process, can solve the problems of insufficient blocking of trench hole hard mask, inability to open the bottom of the hole, and slow etching rate, etc., to reduce the difficulty of etching , good connection, and the effect of reducing the aspect ratio

Active Publication Date: 2018-02-23
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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Problems solved by technology

As shown in Figure 1, in the above-mentioned traditional process, since the material of the channel hole and the hard mask on the top are the same, the etching rate at the top of the channel hole is very fast due to the one-step etching method, whil

Method used

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  • SONO etching technology with ultrahigh depth-to-width radio
  • SONO etching technology with ultrahigh depth-to-width radio
  • SONO etching technology with ultrahigh depth-to-width radio

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Embodiment Construction

[0036] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0037] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as ch...

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Abstract

The invention provides a SONO etching technology. According to the technology, by changing the structure of a film layer in the prior art on one hand and optimizing a conventional single-step etchingtechnology to the two-step etching technology on the other hand, it is ensured that all SONO holes are opened in an etching process, so that good connection among the channel holes and epitaxial silicon on the bottom is achieved; meanwhile, it is guaranteed that hard-mask silicon nitride on the side walls of the channel holes is not damaged, the technology window of a subsequent manufacturing procedure is increased, and then the performance of a product is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an etching process of ultra-high aspect ratio used in the mass production process of SONO (silicon-oxide-nitride-oxide) memory chips. Background technique [0002] As micro-electromechanical devices and micro-electromechanical systems are more and more widely used in the fields of automobiles and consumer electronics, and silicon channel hole etching technology has broad prospects in the future packaging field, dry plasma deep silicon etching technology has gradually become One of the hottest processes in the field of MEMS processing and silicon channel hole etching technology. [0003] In the field of semiconductor technology, 3D stacked packaging technology has been regarded as the key to the ability to manufacture high-performance chips with a smaller size. In the application of 3D stacked packaging technology, it is usually necessary to etch deep via holes on mater...

Claims

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Application Information

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IPC IPC(8): H01L21/82H01L21/822H01L27/10
CPCH01L21/82H01L21/8221H01L27/10
Inventor 刘隆冬王猛陈保友苏恒朱喜峰肖为引方振
Owner YANGTZE MEMORY TECH CO LTD
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