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Photosensitive sensor having wide detection degree

A technology of photosensitive sensors and photoresistors, which is applied in the electronic field, can solve the problems of poor applicability of photosensitive sensors, and achieve the effect of wide detection and improved applicability

Inactive Publication Date: 2018-02-23
NANJING LVZHICHENG PATENT TECH DEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing photosensitive sensor is affected by the material of its core component photoresistor, which can only detect a specific detection range, resulting in poor applicability of the photosensitive sensor

Method used

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Examples

Experimental program
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Embodiment Construction

[0006] The present invention will be further illustrated below in conjunction with specific embodiments, and it should be understood that the following specific embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention.

[0007] A photosensitive sensor with a wide detection range, which includes a photosensitive resistor, and the photosensitive resistor is made of the following materials according to their weight ratio: 20 to 44 parts of zinc tellurium compound, 18 to 29 parts of zirconium dioxide, and 18 parts of strontium titanate to 29 parts, 12 to 18 parts of lead titanate, 8 to 16 parts of spodumene, 2 to 7 parts of polyaluminum siloxane, 2 to 5 parts of alkyl chlorosilane, and 2 to 5 parts of alkyl siloxane. The photoresistor is doped with tungsten trioxide particles and zinc sulfide particles.

[0008] The photosensitive sensor with wide detection degree adopts the above technical solution, which can c...

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PUM

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Abstract

The invention discloses a photosensitive sensor having a wide detection degree. The photosensitive sensor comprises a photosensitive resistor, wherein the photosensitive resistor is prepared from thefollowing materials based on parts by weight: 20-44 parts of tellurium zinc compound, 18-29 parts of zirconium dioxide, 18-29 parts of strontium titanate, 12-18 parts of lead titanate, 8-16 parts of spodumene, 2-7 parts of polyaluminum siloxane, 2-5 parts of alkylchlorosilane and 2-5 parts of alkyl siloxane, and WO3 particles and zinc sulfide particles are doped in the photosensitive resistor. With the photosensitive sensor having the wide detection degree, disclosed by the technical scheme, the formed photosensitive material has wider detection degree by matching of various materials, and theapplicability of the photosensitive resistor can be further improved.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a photosensitive sensor with wide detection degree. Background technique [0002] Photosensitive sensor is one of the most common sensors. It has a wide variety, mainly including: photocell, photomultiplier tube, photoresistor, phototransistor, solar cell, infrared sensor, ultraviolet sensor, fiber optic photoelectric sensor, color sensor, CCD and CMOS image sensor, etc. Its sensitive wavelengths are around the wavelengths of visible light, including infrared and ultraviolet wavelengths. The light sensor is not limited to the detection of light, it can also be used as a detection element to form other sensors to detect many non-electric quantities, as long as these non-electric quantities are converted into changes in optical signals. Optical sensor is one of the sensors with the largest output and widest application at present, and it occupies a very important position in ...

Claims

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Application Information

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IPC IPC(8): H01L31/0296H01L31/09
CPCH01L31/02963H01L31/09
Inventor 刘凤英
Owner NANJING LVZHICHENG PATENT TECH DEV CO LTD
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