A kind of germanium selenide film and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 成都阿尔法金属材料有限公司
- Publication Date
- 2019-11-08
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Abstract
Description
technical field
[0001] The invention relates to the technical field of thin film preparation, in particular to a germanium selenide thin film and a preparation method thereof. Background technique
[0002] Many semiconductor materials, such as titanium oxide, cuprous oxide, bismuth iodide oxide, etc., have no response in the near-infrared region because of their large band gaps. Devices made of a single semiconductor material can only produce photoelectricity in the visible region. or images. In response to this problem, Saxena et al. proposed the idea of using the up-conversion optical properties of rare earth ion doping to convert near-infrared light into visible light and then be absorbed by semiconductor materials.
[0003] So far, the research around this idea has focused on placing the prepared up-conversion nanomaterials on the back substrate of amorphous silicon solar cells, or adding them to the inside of sensitized solar cells, or combining them with organic sol...