Monocrystalline silicon seed crystal splicing method

A monocrystalline silicon and seed crystal technology, which is applied in the field of photovoltaic solar cell manufacturing, can solve the problem of large gaps in monocrystalline silicon seed crystals

Inactive Publication Date: 2018-02-27
JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, the purpose of the present invention is to provide a method for splicing single crystal silicon seeds to solve the problem that the gap between single crystal silicon seeds is too large during the process of splicing single crystal silicon seeds to form a seed layer

Method used

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  • Monocrystalline silicon seed crystal splicing method
  • Monocrystalline silicon seed crystal splicing method
  • Monocrystalline silicon seed crystal splicing method

Examples

Experimental program
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Effect test

Embodiment 1

[0027] see Figure 1 to Figure 3 A method for splicing single crystal silicon seed crystals according to the first embodiment of the present invention includes step S01 and step S02.

[0028] Step S01, coating the bonding agent on the splicing surface of each silicon single crystal seed crystal 10 in sequence, and then placing the single crystal silicon seed crystal 10 coated with the adhesive 30 on a surface roughness Splice on a horizontal workbench 20 smaller than 0.2 mm to form a seed layer 100 .

[0029] Specifically, in this embodiment, 36 single-crystal silicon seed crystals 10 are selected in advance, and the height difference between every two single-crystal silicon seed crystals is less than 1mm, and these 36 single-crystal silicon seed crystals 10 are sequentially placed Coat the bonding agent 30 on the splicing surface, and sequentially splice 36 single crystal silicon seed crystals 10 in a 6×6 manner to form a seed crystal layer 100 .

[0030] It can be understo...

Embodiment 2

[0042] A method for splicing single crystal silicon seed crystals provided by the second embodiment of the present invention includes step S11 and step S12.

[0043] Step S11, selecting 49 single crystal silicon seed crystals 10, coating the bonding agent on the splicing surface of each single crystal silicon seed crystal 10 in turn, and then coating the single crystal silicon seed crystals 10 coated with the adhesive 30 49 single crystal silicon seed crystals 10 were spliced ​​sequentially in a 7×7 manner on a horizontal workbench 20 with a surface roughness less than 0.2 mm to form a seed crystal layer 100 .

[0044] Specifically, in this embodiment, the main components of the binder 30 include a mixture of silica sol and ceramic binder, and the mixing ratio of silica sol and ceramic binder is 1:1.

[0045] Step S12, after standing still for 3600s, put the seed crystal layer 100 into the bottom end of the crucible 40 by the robot.

Embodiment 3

[0047] A method for splicing single crystal silicon seed crystals provided by the third embodiment of the present invention includes step S21 and step S22.

[0048] Step S21, select 25 single crystal silicon seed crystals 10, apply adhesive on the splicing surface of each single crystal silicon seed crystal 10 in turn, and then place the single crystal silicon seed crystals 10 coated with the adhesive 30 25 single crystal silicon seed crystals 10 are spliced ​​sequentially in a 5×5 manner on a horizontal workbench 20 with a surface roughness less than 0.2 mm to form a seed crystal layer 100 .

[0049] Specifically, in this embodiment, the main components of the binder 30 include a mixture of silica sol and ceramic binder, and the mixing ratio of silica sol and ceramic binder is 2:1.

[0050] Step S22, after standing still for 1800s, put the seed crystal layer 100 into the bottom end of the crucible 40 by robot.

[0051] Combining with Example 1, Example 2, and Example 3, it c...

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Abstract

The invention provides a monocrystalline silicon seed crystal splicing method which comprises the following steps: coating splicing surfaces of monocrystalline silicon seed crystals with an adhesive in sequence, and splicing the monocrystalline silicon seed crystals coated with the adhesive in preset positions in sequence on a horizontal working table so as to form seed crystal layers; and leavingto stand for a preset time, and putting the seed crystal layers into the bottom end of a crucible through a robot arm. According to the monocrystalline silicon seed crystal splicing method, splicingsurfaces of two adjacent monocrystalline silicon seed crystals are spliced together through the adhesive, the seed crystals are left to stand for the preset time, then the adhesive can be cured, the seed crystal layers are formed by a plurality of the monocrystalline silicon seed crystals, the seed crystal layers are further put into the bottom end of the crucible, the adhesive among the splicingsurfaces of the monocrystalline silicon seed crystals plays a role in bonding two adjacent monocrystalline silicon seed crystals, in addition splicing seams between two adjacent monocrystalline silicon seed crystals are eliminated, defects caused by the splicing seams are avoided, and the quality of a finished product of monocrystalline silicon is improved.

Description

technical field [0001] The invention relates to the technical field of photovoltaic solar cell manufacturing, in particular to a method for splicing monocrystalline silicon seed crystals. Background technique [0002] In recent years, monocrystalline silicon and polycrystalline silicon have been widely used in photovoltaic solar cells, liquid crystal displays and other fields. Among them, single crystal silicon is a relatively active non-metallic element, an important part of crystal materials, and is at the forefront of the development of new materials. Its main uses are as semiconductor materials and the use of solar photovoltaic power generation, heating and so on. [0003] At present, the commonly used manufacturing method of monocrystalline silicon is the directional solidification method. The rectangular parallelepiped monocrystalline silicon seed crystal is laid regularly at the bottom of the crucible manually to form a seed crystal layer; then the silicon material i...

Claims

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Application Information

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IPC IPC(8): C30B33/06C30B11/14C30B29/06
CPCC30B33/06C30B11/14C30B29/06
Inventor 肖贵云陈伟陈志军金浩林瑶
Owner JINKO SOLAR CO LTD
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