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Waveguide electro-optic intensity modulation device with very low half-wave voltage

A technology of half-wave voltage and light intensity, applied in optics, nonlinear optics, instruments, etc., to achieve the effect of large electro-optical coefficient, convenient integration of optoelectronics, and small size

Active Publication Date: 2018-02-27
XIAN INSTITUE OF SPACE RADIO TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Up to now, using the electro-optic birefringence effect of PLZT transparent ceramics, only thin-film waveguide structures have been reported.

Method used

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  • Waveguide electro-optic intensity modulation device with very low half-wave voltage
  • Waveguide electro-optic intensity modulation device with very low half-wave voltage
  • Waveguide electro-optic intensity modulation device with very low half-wave voltage

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0022] Such as figure 1 as shown, figure 1 It is a structural schematic diagram of an extremely low voltage modulator of the present invention. It can be seen from the figure that an extremely low half-wave voltage waveguide light intensity modulation device includes a first transmission optical waveguide 1, a second transmission optical waveguide 2, and a third transmission optical waveguide 3. The fourth transmission optical waveguide 4, the fifth transmission optical waveguide 5, the sixth transmission optical waveguide 6, the modulation optical waveguide 7, the eighth transmission optical waveguide 8, the microelectrode 9, the microelectrode 10 and the external power supply 11, with electro-optic transparency The ceramic (PLZT / PMNT) is used as the substrate, and the op...

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Abstract

Disclosed is a waveguide electro-optic intensity modulation device with very low half-wave voltage. The modulation device comprises a substrate, optical waveguides, a micro-electrode, an external driving power supply (11); with electro-optic transparent ceramic serving as the substrate, by means of a femtosecond laser micromachining method, the optical waveguides are induced out on the electro-optic transparent ceramic substrate, the microelectrode is manufactured, a mach-zehnder electro-optic modulator is integrated, and the microelectrode is connected with the external driving power supply (11). The waveguide electro-optic intensity modulation device has the advantages of being low in half-wave voltage, high in response speed and high in extinction ratio, and can be applied in the fieldsof laser optoelectronic devices, optical communication and the like.

Description

technical field [0001] The invention relates to a waveguide light intensity modulation device. Background technique [0002] Transparent PLZT / PMNT electro-optic ceramics have a wide transmission band (0.4-7 μm), a large secondary electro-optic coefficient (under equivalent conditions than LiNbO 3 Higher by two quantities), high laser damage threshold (>500MW / cm 2 ), fast response speed (tens of nanoseconds), and many other advantages, so that transparent PLZT / PMNT electro-optic ceramics have been studied in the field of new high-power electro-optic switches, and certain research results have been achieved in the innovation of devices. Combined with the rapid development of femtosecond laser pulses in the current society, taking advantage of its unique advantages that can be focused in the material body for micromachining, ceramics have great potential in reducing the size or laser-induced modification to improve the loss of devices and increase the response speed of mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/055G02F1/035
CPCG02F1/035G02F1/0551G02F1/0553
Inventor 张学娇徐常志杨新权兰枫
Owner XIAN INSTITUE OF SPACE RADIO TECH
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