Element semiconductor lateral super-junction double-diffused transistor with function of optimizing lateral and longitudinal electric fields synchronously
A semiconductor, horizontal and vertical technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of substrate-assisted depletion, limited optimization effect of lateral electric field, uneven distribution of surface electric field, etc.
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[0040] Such as figure 1 , figure 2 with image 3 Shown is a horizontal superjunction double-diffused transistor with horizontal and vertical electric fields while optimizing the elemental semiconductor:
[0041] Elemental semiconductor material substrate 1, the doping concentration is the concentration of general elemental semiconductor single crystal material, the typical value is 1×10 13 cm -3 ~1×10 15 cm -3 ;
[0042] a base region 2 located on the surface of the elemental semiconductor substrate;
[0043] Implant N columns and P columns on the elemental semiconductor substrate at the edge of the base region, and arrange them alternately to form superjunction (SuperJunction) drift regions 5 and 6;
[0044] a source region 3 located on the surface of the base region;
[0045] The drain region 4 located on the surface of the super junction drift region;
[0046] Below the drift region at the drain end are vertical auxiliary depletion substrate buried layers 7 and 8; ...
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