Groove gate preparation method for transistor and large power radio-frequency device

Abstract

The invention discloses a groove gate preparation method for a transistor and a large power radio-frequency device. The preparation method comprises the steps: sequentially depositing a sacrificial layer and photoresist on a substrate; carrying out the phase transformation processing of a photoetching region of the photoresist through laser direct-writing photoetching; carrying out the developmenton the photoresist and the sacrificial layer after phase transformation, and obtaining a photoetching pattern; carrying out the further phase transformation processing of the photoresist after phasetransformation; taking the photoresist and the sacrificial layer after further phase transformation as the mask, and carrying out the etching of the substrate; removing the residual photoresist and sacrificial layer on the substrate, and forming a groove gate of the transistor on the substrate. Because the technology of laser direct-writing photoetching is advantageous in narrow linewidth and in high writing speed, the preparation of a large-area short-gate-length transistor while the groove gate prepared through the technology of laser direct-writing photoetching is guaranteed to be narrowerin photoetching lines.

Description

technical field [0001] The invention relates to the technical field of transistor preparation, in particular to a method for preparing a groove gate of a transistor and a high-power radio frequency device. Background technique [0002] Wide bandgap semiconductors have the characteristics of large bandgap width, high breakdown field strength, high thermal conductivity, and high electron saturation drift velocity, and have great potential in the field of high temperature and microwave power device manufacturing. Among them, GaN-based high electron mobility transistors (HEMTs) have obvious advantages in microwave high-power and high-temperature applications, and have become one of the current research hotspots. [0003] In the microwave field, the frequency characteristic of the transistor is directly related to the length of the gate electrode of the transistor; the shorter the gate length of the transistor is, the higher the frequency characteristic of the transistor is. At ...

AI Technical Summary

Problems solved by technology

The stepper projection lithography machine has high lithography efficiency and can be applied to large-area lithography, but compared with electron beam lithography, the resolution of stepper projection lithography is low

Images