Method for preparing grooved gate of transistor and high-power radio frequency device

Abstract

The invention discloses a method for preparing a groove gate of a transistor and a high-power radio frequency device. The preparation method comprises successively depositing a sacrificial layer and a photoresist on a substrate; using laser direct writing lithography to perform phase change treatment on the photoresist area of ​​the photoresist; after the phase change, the photoresist and the sacrificial developing on the layer to obtain a photolithographic pattern; further performing a phase change treatment on the photoresist after the phase change treatment; using the photoresist after the further phase change treatment and the sacrificial layer as a mask to etch the substrate ; Removing the remaining photoresist and the sacrificial layer on the substrate to form a grooved gate of the transistor on the substrate. Since the laser direct writing lithography technology has the advantages of narrow line width and fast writing rate, the present invention uses the laser direct writing lithography technology to prepare the groove grid, which can ensure that the obtained groove grid has narrow lithography lines and can Realize the fabrication of large area short gate length transistors.

Description

technical field [0001] The invention relates to the technical field of transistor preparation, in particular to a method for preparing a groove gate of a transistor and a high-power radio frequency device. Background technique [0002] Wide bandgap semiconductors have the characteristics of large bandgap width, high breakdown field strength, high thermal conductivity, and high electron saturation drift velocity, and have great potential in the field of high temperature and microwave power device manufacturing. Among them, GaN-based high electron mobility transistors (HEMTs) have obvious advantages in microwave high-power and high-temperature applications, and have become one of the current research hotspots. [0003] In the microwave field, the frequency characteristic of the transistor is directly related to the length of the gate electrode of the transistor; the shorter the gate length of the transistor is, the higher the frequency characteristic of the transistor is. At ...

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Problems solved by technology

The stepper projection lithography machine has high lithography efficiency and can be applied to large-area lithography, but compared with electron beam lithography, the resolution of stepper projection lithography is low

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