Unlock instant, AI-driven research and patent intelligence for your innovation.

TFT substrate and manufacturing method therefor

A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of too many masks and high manufacturing costs, and achieve the effects of reducing the number of masks, lowering manufacturing costs, and saving manufacturing costs

Active Publication Date: 2018-03-13
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the manufacturing process of the entire TFT substrate requires a large number of masks, and the production cost is relatively high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • TFT substrate and manufacturing method therefor
  • TFT substrate and manufacturing method therefor
  • TFT substrate and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0044] see figure 1 , the present invention at first provides a kind of manufacture method of TFT substrate, comprises the following steps:

[0045] Step S1, please refer to figure 2 , providing a base substrate 1 on which TFTs 10 arranged in an array are fabricated.

[0046] specifically:

[0047] The base substrate 1 is preferably a glass substrate.

[0048] The structure of the TFT 10 is not limited, it may be a back channel (BCE) type TFT, or an etch stop (ESL) type TFT. Take the BCE type TFT as an example, such as figure 2 As shown, the TFT 10 includes a gate 104 disposed on the base substrate 1, a gate insulating layer 105 covering the gate 104 and the base substrate 1, and a gate insulating layer 105 disposed above the gate 104. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a TFT substrate and a manufacturing method therefor. The manufacturing method comprises the steps: continuously depositing a metal film and a transparent conductive film on a TFT; coating the transparent conductive film with photoresist, carrying out the exposure and development of photoresist through a halftone mask, and obtaining a first photoresist layer and a second photoresist layer; carrying out the etching of the transparent conductive film and the metal film, which are not covered by the first and second photoresist layers; carrying out the ashing processing of the first and second photoresist layers, and removing the second photoresist layer; carrying out the etching of the exposed transparent conductive film, and exposing the metal film which is not coveredby the remaining first photoresist layer; carrying out the oxidization processing of the exposed metal film, and forming an insulated metal oxide film as a passivation layer; finally peeling off theremaining first photoresist layer, and exposing the metal file and the transparent conductive film which are not covered by the remaining first photoresist layer as the pixel electrodes. The method can reduce the number of photomasks, and saves the manufacturing cost.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT substrate and a manufacturing method thereof. Background technique [0002] The flat panel display device has many advantages such as thin body, power saving, and no radiation, and has been widely used. Existing flat panel display devices mainly include Liquid Crystal Display (LCD) and Organic Light Emitting Display (OLED). [0003] Most of the liquid crystal displays currently on the market are backlight liquid crystal displays, which include a housing, a liquid crystal panel disposed in the housing, and a backlight module disposed in the housing. The structure of the liquid crystal panel is composed of a color filter substrate (Color Filter, CF), a thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate, referred to as TFT substrate) and a liquid crystal layer (LiquidCrystal Layer), its working principle is to control the rotatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1214H01L27/124H01L27/1248H01L27/1288H10K59/123H01L27/1225G02F1/13439
Inventor 徐洪远
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com