Ultraviolet LED and manufacturing method therefor

A production method, ultraviolet technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low solubility and difficult to increase hole concentration, and achieve the effect of reducing activation energy and increasing hole concentration

Active Publication Date: 2018-03-13
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology

However, due to the low solubility of acceptor dopants, the self-compensation effect caused by defects, and the Al X Ga 1-X The Mg acceptor activation energy gradually i

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  • Ultraviolet LED and manufacturing method therefor
  • Ultraviolet LED and manufacturing method therefor
  • Ultraviolet LED and manufacturing method therefor

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Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0042] As mentioned in the background, due to the low solubility of acceptor dopants, self-compensation effects caused by defects, and Al X Ga 1-X The Mg acceptor activation energy gradually increases with the increase of the Al composition in the N material, so that the p-type doped Al X Ga 1-X It is difficult to increase the hole concentration in N materials.

[0043] In order to increase the p-type doped Al X Ga 1-X The hole concentration in N material...

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Abstract

The invention discloses an ultraviolet LED and a manufacturing method therefor. According to the technical scheme, a p type hole injection layer comprises a plurality of superlattice layer period units stacked in a first direction, wherein each superlattice layer period unit comprises an aluminum nitride layer, at least one magnesium nitride layer and at least one gallium nitride layer; the magnesium nitride layer and the gallium nitride layer are both positioned on one side, deviating from a substrate, of the aluminum nitride layer; at least one of the two opposite surfaces of the magnesium nitride layer in the first direction is adjacent to the gallium nitride layer. At least one of the two side surfaces of the magnesium nitride layer is adjacent to the gallium nitride layer, so that more Ga atoms can be distributed around Mg atoms by virtue of the abovementioned setting, and the activation energy of the Mg acceptor can be greatly lowered, thereby improving the hole concentration ofa p type doped Al<X>Ga<1-X>N material.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, and more specifically relates to an ultraviolet LED and a manufacturing method thereof. Background technique [0002] Ultraviolet LEDs can emit ultraviolet light, and have broad application prospects in the fields of ultraviolet curing, anti-counterfeiting detection, and medical care, and have attracted the attention of researchers. At present, UV LEDs generally use Al X Ga 1-X N is the main epitaxial material of the p-type hole injection layer, while Al X Ga 1-X The p-type doping of N materials is still a technical difficulty in this field, and Al with high hole concentration X Ga 1-X N has been difficult to obtain, seriously restricting the development of UV LEDs. [0003] In the prior art, generally adopts dichloromagnesium (Cp 2 Mg) as Al X Ga 1-X A doped magnesium source for N material to form a p-type hole injection layer. However, due to the low solubi...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/007H01L33/14
Inventor 卓祥景汪洋孙传平邓群雄万志
Owner XIAMEN CHANGELIGHT CO LTD
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