Nitride semiconductor device

A technology of nitride semiconductors and semiconductors, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as difficulties in achieving high blocking withstand voltages, and achieve the effect of reducing on-resistance

Active Publication Date: 2018-03-23
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since holes cannot be moved in and out in the MOS structure, holes accumulate on the lateral side of the g

Method used

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Example

[0029] (First embodiment)

[0030] The first embodiment of the present invention will be described. In this embodiment mode, a nitride semiconductor device including a GaN device using a compound semiconductor mainly composed of GaN as the nitride semiconductor will be described.

[0031] Such as figure 1 As shown, the nitride semiconductor device according to this embodiment includes a horizontal switching element. in figure 1 In, only one cell of the switching element is shown, but in fact, by using figure 1 The left end of the paper is a central line symmetrically laid out in multiple units to form a switching element. The switching element is set figure 1 The left and right direction of is the x direction, the depth direction is the y direction, and the vertical direction is the z direction, and the structure is as follows.

[0032] The horizontal switching element is formed using a structure in which a GaN layer 2, an AlGaN layer 3, and a GaN layer 4 are sequentially stack...

Example

[0066] (Second embodiment)

[0067] The second embodiment of the present invention will be described. In this embodiment, the structure of the compound semiconductor substrate, specifically, the structure of the channel formation layer is changed from the first embodiment. Regarding the other, the present embodiment is the same as the first embodiment, so only the differences from the first embodiment will be described.

[0068] Such as Figure 5 As shown, in this embodiment, a structure in which a structure in which an AlGaN layer 3 and a GaN layer 4 are laminated is repeatedly formed in multiple groups on the GaN layer 2 formed on the surface of the substrate 1 is used as a compound semiconductor substrate. As described in the first embodiment, the film thickness of the AlGaN layer 3 provided in each group, that is, the z-direction dimension is set to be 10 nm or more and 200 nm or less, preferably 30 nm or more and 120 nm or less. In addition, a channel formation layer is form...

Example

[0072] (Third Embodiment)

[0073] The third embodiment of the present invention will be described. In this embodiment, compared to the first and second embodiments, the p + -The structure of the GaN layer 6. Regarding the other, this embodiment is the same as the first and second embodiments, so only the parts that are different from the first and second embodiments will be described. In addition, here, p is changed from the first embodiment + The form of the structure of the GaN layer 6 is taken as an example, but the same structure can be applied to the second embodiment.

[0074] Such as Figure 6A As shown, in this embodiment, p + -A structure in which the GaN layer 6 reaches the AlGaN layer 3 on the lowermost layer side and does not reach the GaN layer 2. Thus, in this embodiment, p + -The GaN layer 6 is formed halfway to the AlGaN layer 3 on the lowermost layer side.

[0075] Even with such a structure, holes can be sucked out, and the electric field from the drain region c...

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Abstract

This nitride semiconductor device is provided with a lateral switching device having a substrate (1), a channel forming layer, a source region (9), a drain region (10), and a gate region (6). The source region and the drain region are disposed by being separated from each other in one direction in the planar direction of the substrate. The gate region is disposed between the source region and thedrain region, and is configured from a p-type semiconductor layer. In the planar direction of the substrate, the gate region is provided by being divided into a plurality of regions in the perpendicular direction with respect to the direction in which the source region and the drain region are disposed. Consequently, low on-resistance can be achieved, while ensuring a high blocking breakdown voltage.

Description

[0001] Cross-reference of related applications [0002] This application is based on Japanese Patent Application No. 2015-140825 filed on July 14, 2015, and the content of the description is incorporated herein. technical field [0003] The present invention relates to a nitride semiconductor device using a nitride semiconductor such as gallium nitride (hereinafter referred to as GaN). Background technique [0004] Conventionally, Patent Document 1 discloses a technique for realizing normally off and low on-resistance in a nitride semiconductor device having a plurality of channels. Specifically, a heterojunction structure in which an AlGaN layer and a GaN layer are repeatedly formed on a GaN layer forms a natural super junction structure (hereinafter referred to as an NSJ structure). In addition, a first gate structure portion reaching the lowermost AlGaN layer in the NSJ structure and a second gate structure portion reaching the upper AlGaN layer are provided, and the fir...

Claims

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Application Information

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IPC IPC(8): H01L21/338H01L21/336H01L21/337H01L27/098H01L29/778H01L29/78H01L29/808H01L29/812
CPCH01L29/778H01L29/407H01L29/66462H01L29/0843H01L29/1066H01L29/2003H01L29/78H01L29/4236H01L29/7783
Inventor 樋口安史星真一小山和博
Owner DENSO CORP
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