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UV-assisted material injection into porous films

A technology of porous membranes and dielectric materials, applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc.

Active Publication Date: 2018-03-27
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As dimensions continue to get smaller, new challenges arise for process steps such as filling the gaps between circuit elements with dielectric materials that avoid electrical crosstalk

Method used

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  • UV-assisted material injection into porous films
  • UV-assisted material injection into porous films
  • UV-assisted material injection into porous films

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Embodiment Construction

[0016] Methods for reducing shrinkage experienced by porous films on patterned substrates are described. The film may be a silicon and hydrogen containing layer further containing one or both of carbon, oxygen and nitrogen. Immediately after deposition, by simultaneous exposure to relatively small molecular precursors such as NH 3 or C 2 h 2 ) and a UV light source to treat the silicon and hydrogen containing layer. This treatment may even reduce the shrinkage that the porous membrane subsequently experiences at the bottom of the membrane due to significant permeation prior to the reaction. This treatment can reduce shrinkage at the bottom of the gap filled with the porous membrane, thereby providing the benefit of maintaining a larger fill factor within the gap after the treatment is complete.

[0017] Porous materials may be used, for example, to produce low-k dielectric films, but may also be useful in other situations. Porous membranes can be formed by various methods...

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Abstract

Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon,oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even at the bottom of the film due to the significant penetration prior to reaction. The treatment may reduce shrinkage at the bottom of a trench filled with the porous film which provides the benefit of maintaining a greater filling factor within the trench after processing is completed.

Description

technical field [0001] Embodiments disclosed herein relate to processing porous membranes. Background technique [0002] Miniaturization of semiconductor circuit elements has reached the point where feature sizes of about 14 nm are produced on a commercial scale. As dimensions continue to get smaller, new challenges arise for process steps such as filling the gaps between circuit elements with dielectric materials that avoid electrical crosstalk. As the width between components continues to shrink, the gap between components tends to become taller and narrower, making it difficult to fill the gap without the dielectric material getting stuck, forming a void or a weak joint. Conventional chemical vapor deposition (CVD) techniques often suffer from material overgrowth on top of the gap before the gap is completely filled. This action creates pores or seams in the crevices where the overgrowth of the deposited dielectric material cuts off prematurely; a problem sometimes refe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/02H01L21/205
CPCH01L21/02126H01L21/02271H01L21/02274H01L21/02337H01L21/76826H01L21/76837H01L21/76825H01L21/02203H01L21/02348H01L21/02211H01L21/0228H01L21/0262
Inventor B·S·安德伍德A·B·玛里克
Owner APPLIED MATERIALS INC