Trench MOS device with integrated TMBS structure and manufacturing method thereof

Abstract

The invention belongs to the technical field of semiconductor power devices, and in particular relates to a trench MOS device with an integrated TMBS structure and a manufacturing method thereof. In the invention, the TMBS diode is located between two trench MOSFET unit cells, which effectively and greatly reduces the Switching loss, suppressing peak voltage and peak current, effectively saving the silicon surface area, reducing the cost of the device, due to the introduction of the TMBS diode structure, can greatly reduce the leakage current of the device and improve the safety performance of the device during use.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a trench MOS device with an integrated TMBS structure and a manufacturing method thereof. Background technique [0002] With the continuous and rapid development of my country's economy, energy consumption is also increasing year by year, especially in the context of global warming, "low-carbon economy" has gradually become a global hotspot, so energy conservation has become one of my country's basic national policies; and New power electronic devices play a particularly important role in it. Among them, trench MOS devices are semiconductor devices with rapid development and good market prospects. They have fast switching speed, high input impedance, good thermal stability, and strong reliability. Advantages, it has a wide range of applications in the fields of computers, communication equipment, power supply circuits of general office equipme...

AI Technical Summary

Problems solved by technology

The disadvantage is that the cost is high, it takes up more area of ​​the circuit board, and due to the influence of parasitic inductance introduced by the long trace, it brings additional loss and EMC and EMI problems

[0005] The second stage is to package the independent Schottky chip and the independent trench MOSFET chip in parallel in the same semiconductor device package. The trench MOSFET chip and the Schottky chip are connected in parallel by wire bonding. The disadvantage is still high cost and High requirements on packaging and large overall area after packaging

[0006] The third stage is to design and manufacture trench MOSFETs and Schottky diodes in the same chip. The method of processing trench MOSFETs and Schottky diodes is to use partition design and differentiated manufacturing schemes, and realize through wire bonding. Interconnection still occupies a large amount of chip area and cost

[0007] Therefore, the disadvantages are: 1. The Schottky diode structure occupies a large amount of silicon surface area, resulting in large chip area and high cost; 2. The process is complicated, resulting in high manufacturing cost.

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