Single particle effect reinforced programmable latch

Abstract

The invention discloses a single particle effect reinforced programmable latch comprising two transmission gate units, wherein the first transmission gate unit is used as a signal input end of the latch, and an output end of the first transmission gate unit is electrically connected with the output end of the second transmission gate unit; and two paths of signal delay circuits, wherein an input end of the first signal delay circuit is electrically connected with the output end of the first transmission gate unit, and the output end of the second signal delay circuit is electrically connectedwith the input end of the second transmission gate unit; each path of signal delay circuits comprises a delay unit, a multipath selector and a protection gate unit, which are electrically connected insequence, and the multipath selector and the protection gate unit are electrically connected with the input end of the path of signal delay circuits. The latch can resist single particle overturning,and has a higher read-write speed and an overturning restoration time and low power consumption, and an ordinary commercial craft line can be used, so that the cost is low.

Description

technical field [0001] The disclosure belongs to the technical field of electronic control systems, and relates to a single event effect hardened programmable latch. Background technique [0002] With the development of space technology, nuclear technology and strategic weapons, various electronic devices have been widely used in artificial satellites, spacecraft, launch vehicles, long-range missiles and nuclear weapon control systems. Electronic components that make up electronic equipment are inevitably exposed to radiation environments. Due to the rapid development of semiconductor technology, the integration of semiconductor devices used in spacecraft continues to increase, the feature size is getting smaller and smaller, and the operating voltage is getting lower and lower. Correspondingly, The critical charge is also getting smaller and smaller, and single event effects are more and more likely to occur. The single event effect refers to the accumulation of energy by ...

AI Technical Summary

Problems solved by technology

Among them, process hardening refers to the use of special process flow and different process parameters so that the device has good radiation resistance characteristics. Reduce the charge collection on the heavy ion trajectory, so as to achieve the purpose of improving the anti-single event turnover performance, but the SOI process is costly, there are few optional process lines, and the integration is usually behind the commercial process

Design reinforcement includes the method of resistance reinforcement, which increases the feedback time by introducing feedback resistors, thereby improving the anti-single event flipping ability of the unit. This method was widely used in the early days, and its biggest disadvantage is that it reduces the writing speed, especially in low temperature conditions. Down

Among the various latch design reinforcement schemes, some flipping is not easy to recover or the flipping recovery time is long, some have a large area cost, and some have a large quiescent current, and the current various reinforcement structures do not have the ability of single event transient effects

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