Temperature compensation method and device of silicon-sapphire pressure sensor

A pressure sensor and temperature compensation technology, which is applied to the measurement of the property force of the piezoelectric resistance material, the measurement device, and the measurement of fluid pressure, etc., can solve the problems of no compensation scheme, etc., achieve good compensation effect, high compensation accuracy, and reliability Adjustable high effect

Active Publication Date: 2018-04-13
AVIC BEIJING CHANGCHENG AVIATION MEASUREMENT & CONTROL TECH INST +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are few studies on temperature compensation of silicon-sapphire pressure sensors at home and abroad, and there is no particularly effective compensation scheme at present

Method used

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  • Temperature compensation method and device of silicon-sapphire pressure sensor
  • Temperature compensation method and device of silicon-sapphire pressure sensor
  • Temperature compensation method and device of silicon-sapphire pressure sensor

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Embodiment Construction

[0029] Below in conjunction with accompanying drawing, technical solution of the present invention is described in further detail:

[0030] See attached figure 1 As shown, the device for the temperature compensation method of the silicon-sapphire pressure sensor described in the present invention includes a silicon-sapphire pressure sensor 1, a mounting seat 4 is fixed on the pressure-leading end of the silicon-sapphire pressure sensor 1, and the mounting seat 4 Install a pressure introduction shell 3 at the front end, and the inside of the pressure introduction shell 3 is processed with a channel for introducing external pressure, and a shell 5 is fixed at the rear end of the mounting seat 4 to enclose the silicon-sapphire pressure sensor 1 in its inner cavity, and the installation A PT100 temperature sensor 2 is arranged on the seat 4 , and the measuring end of the PT100 temperature sensor 2 is located in the channel inside the pressure introduction shell 3 . The probe part...

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Abstract

The invention provides a temperature compensation method and device of a silicon-sapphire pressure sensor. In the method, by combining temperature drifting characteristics of a silicon-sapphire pressure sensor, a compensation algorithm combined with least squares linear fitting and parabola interpolation is designed, so compared with the traditional linear compensation algorithm, the pressure temperature relation curves obtained in the method are quite close to the actual pressure temperature change rule, a problem of quite big compensation error existing in the traditional linear compensationalgorithm is well solved and quite good compensation effects are achieved. The invention also provides a compensation device. By integrating the pressure sensor and the temperature sensor, on one hand, a sensor structure is simplified, and on the other hand, compared with a split structure, the measured temperature is quite close to the actual working temperature of the pressure sensor, so the device has good compensation effects.

Description

technical field [0001] The invention relates to a temperature compensation method and device for a silicon-sapphire pressure sensor, belonging to the technical field of measurement. Background technique [0002] The silicon-sapphire pressure sensor is a high-temperature-resistant pressure sensor, and its sensitive unit is a silicon-sapphire diaphragm composed of a single crystal silicon resistor and a sapphire diaphragm. When the pressure acts on the sensor, the diaphragm is deformed by force, and the resistance on the film changes due to the piezoresistive effect. The Wheatstone bridge composed of these resistances outputs a voltage signal proportional to the pressure, thereby realizing pressure measurement. . Due to the wide working temperature range of the silicon-sapphire pressure sensor, and the material is easily affected by temperature and other factors, the temperature drift will have a great impact on the measurement accuracy of the sensor. [0003] The temperatur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18G01L1/26G01L9/06
CPCG01L1/18G01L1/26G01L9/065
Inventor 刘德峰黄漫国郭占社邹兴李欣张梅菊
Owner AVIC BEIJING CHANGCHENG AVIATION MEASUREMENT & CONTROL TECH INST
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