A kind of gan-based LED chip of silicon substrate and manufacturing method thereof

Abstract

The invention discloses a manufacturing method of a silicon substrate-equipped GaN-based LED chip. The manufacturing method comprises the steps of providing an epitaxial structure, a silicon structureand a bending adjustment structure, wherein the epitaxial structure comprises a sapphire substrate, and an N type GaN layer, an active layer, a P type GaN layer and a first bonding layer arranged onthe sapphire substrate in sequence; the silicon structure comprises a silicon substrate, a second bonding layer arranged on the surface of the silicon substrate, and a first adhesive layer arranged onthe back surface of the silicon substrate; and the bending adjustment structure comprises a bending adjustment layer and a second adhesive layer arranged on the surface of the bending adjustment layer. Through the first bonding layer and the second bonding layer, and the first adhesive layer and the second adhesive layer, the epitaxial structure, the silicon structure and the bending adjustment structure are connected into an integrated body to form an LED wafer; the process is simple, so that silicon substrate transfer can be performed effectively; and in addition, by virtue of setting of the bending adjustment layer, the bending degree of the LED wafer is lowered effectively, and the laser lift-off substrate yield is improved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a GaN-based LED chip with a silicon substrate and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor device that uses carrier recombination to release energy to form light. LED chips have low power consumption, pure chromaticity, long life, small size, fast response time, energy saving and environmental protection, etc. Many advantages. [0003] In the existing vertical structure LED chips, an epitaxial layer is generally formed on a sapphire substrate, and then the epitaxial layer is transferred to a substrate with high thermal conductivity, such as a metal substrate such as silicon, copper, or molybdenum. Due to the high thermal conductivity of copper and molybdenum, metals such as copper and molybdenum are generally preferred as transfer substrates. However, due to the flexibility of ...

AI Technical Summary

Problems solved by technology

Specifically, when transferring the substrate, the sapphire substrate and the silicon substrate are first thermally bonded, the sapphire substrate shrinks sharply relative to the silicon substrate, and the LED wafer formed after bonding bends toward the sapphire substrate, bending When the final LED wafer is laser-stripped from the sapphire substrate, the laser can only be irradiated on the sapphire substrate obliquely, resulting in incomplete peeling of the sapphire substrate

In addition, when the laser lifts off the sapphire substrate, the epitaxial layer cracks due to the mismatch of curvature caused by the release of internal stress

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