IGBT or MOSFET layout structure used for electric cars

Abstract

The invention belongs to the technical field of electric car transistors, and especially relates to an IGBT or MOSFET layout structure used for electric cars. The IGBT or MOSFET layout structure comprises an IGBT or MOSFET plate; the IGBT or MOSFET plate is provided with a plurality of grooves with intervals; each groove is cut off repeatedly at a distance of 0.6<mu>m; an emitting electrode connection hole is arranged between each pair of adjacent groove segments, wherein the distance from each emitting electrode connection hole to one adjacent groove segment is controlled to be 0.2<mu>m; eachtwo adjacent grooves are arranged in a staggered manner, and are transversely connected; the distance between each pair of adjacent grooves is controlled to be 0.2<mu>m. According to the above design, the design of the grooves and the emitting electrode connection holes is capable of reducing cellular size, increasing groove density, and increasing current density greatly; the size of IGBT or MOSFET chips can be reduced greatly, so that cost is reduced, and the whole design margin is larger.

Description

technical field [0001] The invention belongs to the technical field of electric vehicle transistors, in particular to an IGBT or MOSFET layout structure for electric vehicles. Background technique [0002] With the rapid development of industries such as electric vehicles, higher challenges have been put forward for insulated gate bipolar transistors or metal oxide semiconductor field effect transistors (hereinafter referred to as IGBTs or MOSFETs). One of them is the continuous increase in power capacity. That means the unit current density of the IGBT is as high as possible. To achieve this goal, a very effective measure is to reduce the cell size of the chip again and again to increase its current density. Today, some advanced technologies can reduce the size of the IGBT cell to 0.8um, and the current density can reach 380A / cm 2 . However, the continued reduction of the cell size is limited by the actual process capability and process design rules. The most critical one...

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Problems solved by technology

However, the continued reduction of the cell size is limited by the actual process capability and process design rules. The most critical one is limited by the process size of the IGBT emitter hole or MOSFET source hole itself and the design rules to the trench. , making it extremely difficult or even impossible to continue to shrink the size of IGBT or MOSFET cells

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