A magnetic random access memory and its writing method, reading method and preparation method

Abstract

The invention discloses a magnetic random access memory and its writing method, reading method and preparation method. The magnetic random access memory comprises a substrate layer, a ferroelectric layer, a composite antiferromagnetic structure, a first isolation layer and a second A ferromagnetic layer, the composite antiferromagnetic structure is the free layer of the MRAM, the first ferromagnetic layer is the fixed layer of the MRAM; The coupling state of the composite antiferromagnetic structure; the first ferromagnetic layer has a constant first magnetic moment direction; the first isolation layer is used to control the first magnetic moment direction from being affected by the coupling state of the composite antiferromagnetic structure. This magnetic random access memory uses the mutual transformation of the ferromagnetic coupling and antiferromagnetic coupling of the compound antiferromagnetic structure under the action of an electric field to realize the writing of MRAM, and solves the problem of wires when using the induced magnetic field or polarized current of a wire to realize MRAM writing. The problem of larger MRAM size caused by wider width and lower storage density of MRAM achieves high-density storage.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors and storage devices, and in particular to a magnetic random access memory (MRAM) and its writing method, reading method and manufacturing method. Background technique [0002] The traditional magnetic random access memory (MRAM) consists of a free layer, an isolation layer and a fixed layer, located at the vertical intersection of the word line and the bit line; the magnetic induction effect of the current on the word line and the bit line during the writing process A magnetic field is generated to reverse the magnetization direction of the free layer; the magnetization direction of the free layer and the fixed layer are the same to achieve low magnetoresistance, and the magnetization direction is opposite to achieve high magnetoresistance. MRAM judges whether the stored data is 0 or 1 by detecting the level of magnetoresistance. Since a large current is required to reverse the...

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Problems solved by technology

[0004] The invention provides a magnetic random access memory (MRAM) and its writing method, reading method and preparation method, which solves the problem of relatively wide MRAM size caused by wide line width when using the induced magnetic field or polarized current of the wire to realize MRAM writing in the prior art. Large, low memory density issues with MRAM

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