Method for obtaining proton single-particle effect cross section of device

Abstract

The invention discloses a method for obtaining a proton single-particle effect cross section of a device. The method comprises a step of carrying out heavy ion single-particle effect experiment on thedevice to obtain heavy ion single-particle effect cross-section experimental data, a step of fitting the experimental data by using a Weibull function and obtaining a fitted heavy ion single-particleeffect cross-section function, a step of constructing a device structure including a plurality of metal wiring layers, calculating the nuclear reaction of protons with energy E and a material by using Monte Carlo particle transport simulation, generating secondary particle probability p(EP,L) with LET as L at a device silicon region, and further calculating an integral probability function P(EP,L), and a step of integrating a product of the heavy ion single-particle effect cross-section function and a proton integral probability function and calculating the proton single-particle effect crosssection of the device. According to the method, the evaluation of the ability of the device to resist the proton single particle can be achieved, and the method has the characteristics of clear physical concept and high accuracy of a data result.

Description

technical field [0001] The invention relates to a method for obtaining a proton single-event effect section of a device, and belongs to the research field of space single-event effect simulation test technology and reinforcement technology. Background technique [0002] The space natural radiation environment in which spacecraft operate is mainly composed of protons, heavy ions and electrons. These radiations act on the electronic system of the spacecraft, which will cause the degradation or damage of the device performance, which will cause the spacecraft to malfunction or even fail, and seriously affect the reliability and life of the spacecraft in orbit. The instantaneous disturbance or permanent damage caused by the interaction between a single high-energy particle incident and the sensitive area of ​​the device is called single event effect. Single event effect is one of the most important threats to the electronic system of space satellites today. [0003] In the spac...

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Problems solved by technology

The application number is 2009100855422, and the invention title is "a method and system for evaluating the anti-radiation ability of satellite devices". By fitting the heavy ion single event effect cross-section curve of the device, the proton single particle is obtained based on the fitting parameters. The expression of effect cross section and proton energy, this expression is a simple empirical formula, and it is assumed that the reaction products of proton and device material are all silicon ions, some parameters need to be set manually, resulting in the obtained proton single event effect cross section and the actual There is a large error in the results, and the proton single-particle cross section is underestimated by about 1 order of magnitude

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