Crystal growth crucible and crystal growth furnace

Abstract

The invention provides a crystal growth crucible, wherein an installation position for fixing a seed crystal is arranged on the top wall of the crystal growth crucible, a heat transfer layer is arranged on the installation position, and the heat conductivity coefficient on the plane of the heat transfer layer is larger than the thermal conductivity in the thickness direction. According to the present invention, with the crystal growth crucible and the crystal growth furnace, the radial temperature gradient of the crystal thermal field can be effectively reduced, such that the problem that thecrystal easily cracks during the growth of the large-size crystal can be solved.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and in particular relates to a crystal growth crucible and a crystal growth furnace. Background technique [0002] As a third-generation semiconductor material, silicon carbide has excellent physical and chemical properties, and has broad application prospects and market space in the fields of high-end optoelectronics, high power, and microwave radio frequency. [0003] At present, the physical vapor transport method (PVT for short) is the most mature and common method for forming and growing silicon carbide. The working principle of the PVT method is mainly: place the silicon carbide raw material on the bottom of the crucible and fix the seed crystal on the top of the crucible, and sublimate the silicon carbide raw material at high temperature (for example, above 2200°C) and low pressure. The sublimation gas uses the crystal thermal field The temperature gradient finally crystallizes on ...

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a crystal growth crucible and a crystal growth furnace, which can effectively reduce the radial temperature gradient of the crystal thermal field, thereby solving the problem of growing large-sized The problem that the crystal is easy to crack when crystallized

Images