Memory module based on neural network, memory module and data processing method
A storage module and neural network technology, which is applied in the fields of storage modules, modules and data processing based on neural networks, can solve the problems of large processing time, data access cost, and increased computing processing time.
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Embodiment 1
[0076] refer to Image 6 As shown, in this embodiment, each storage unit includes a nonvolatile memory, the first direction is the row direction, and the second direction is the column direction. In the memory array, the first source and drain of each row of memory are Connected to the first electrical connection AL, the second source and drain of each column of memory are connected to the second electrical connection BL, the gate of each row of memory is connected to the third electrical connection CL, of course, the connection of the gate The manner may also be that the gate of each column of memory is connected to one electrical connection.
[0077] In the forward propagation, the first electrical connection AL can be used as the input terminal, and the second electrical connection BL can be used as the output terminal. Before matrix operation and propagation, data has been written in each memory and is in the first data state. When performing operations, the input signal ...
Embodiment 2
[0081] refer to image 3 As shown, in this embodiment, each storage unit includes a non-volatile memory and a MOS device, the two devices are connected in series, the first source and drain of the memory are connected to the second source and drain of the MOS device, and the first The direction is the row direction, and the second direction is the column direction. In the memory array, the first source and drain electrodes of each row of MOS devices are connected to the first electrical connection line AL, and the second source and drain electrodes of each row of memory devices are connected to the second The electric connection line BL, the gate of each row of memory is connected to the third electric connection line CL, and the gate of each column of MOS devices is electrically connected to the fourth electric connection line DL. Of course, the connection mode of the gate can also be as follows: The gates of a column of memory are connected to an electrical connection, and t...
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