Trench type vertical double-diffusion metallic oxide transistor and manufacturing method thereof
A technology of oxide transistors and vertical double diffusion, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reducing on-resistance, complex process, high cost, etc., and achieve the effect of low on-resistance
Inactive Publication Date: 2018-05-18
SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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Problems solved by technology
[0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, and it is necessary to improve
In addition, there are still some areas that can be optimized in the manufacturing process and device structure of the existing trench VDMOS to further reduce the on-resistance
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[0031] The technical solutions in the embodiments of the present invention will be described clearly and completely below, obviously, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0032] see Figure 1-Figure 13 , figure 1 It is a flow chart of the fabrication method of the trench-type vertical double-diffused metal oxide transistor of the present invention, Figure 2-Figure 13 for figure 1 Schematic diagram of the structure of each step of the manufacturing method of the trench type vertical double-diffused metal oxide transistor shown. The manufacturing method of the trench-type vertical double-diffused metal oxide transistor includes the following steps.
[0033] Step S1, see figure 2 , pro...
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Abstract
A manufacturing method of a trench type vertical double-diffusion metallic oxide transistor includes providing an N type substrate, and forming an initial oxidation layer having first and second openings, and a P type body region; forming a silicon nitride side wall on a side wall of the initial oxidation layer, the P type body region at the first opening being filled with the silicon nitride sidewall, and the silicon nitride side wall at the second opening forming a third opening; utilizing the third opening to etch the P type body region, thereby forming a first trench in the surface of theP type body region; removing the initial oxidation layer, thereby forming a fourth opening formed by the silicon nitride side wall in the position of the initial oxidization layer; utilizing the third opening and the fourth opening to etch the P type body region again, thereby enabling the first trench to be deepened and run through the P type body region to extent to an N type epitaxial layer, and forming a second trench that forms the corresponding fourth opening, runs through the P type body region and extend to the N type epitaxial layer, the depth and width of the first trench being larger than the second trench; and forming a gate oxidation layer, polycrystalline silicon, an N type source region, contact holes, front side metal and reverse side metal.
Description
【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a trench-type vertical double-diffused metal oxide transistor and a manufacturing method thereof. 【Background technique】 [0002] The trench type VDMOS (vertical double diffused metal oxide transistor) is widely used in the field of switching power supply. Trench-type vertical double-diffused metal-oxide-semiconductor transistors (referred to as: trench-type VDMOS) are channeled by forming a vertical diffusion distance difference after source ion and bulk ion implantation, and are widely used in the field of switching power supply and synchronous rectification. Compared with the planar VDMOS, the internal resistance of the trench VDMOS is very small because the JFET area is eliminated. [0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, which need to be improved. In addition, there ...
Claims
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IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L29/49H01L29/06
CPCH01L29/0611H01L29/4236H01L29/4916H01L29/66734H01L29/7802H01L29/7813
Inventor 不公告发明人
Owner SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD