A method using a formation in-situ method to prepare a transition metal oxide/quantum dot Bulk Heterojunction and applications in a light emitting diode

Abstract

The invention discloses a method using a formation in-situ method to prepare a transition metal oxide / quantum dot Bulk Heterojunction and applications in a light emitting diode; the method comprises the following steps: forming a cavity injection and transmission layer and a transition metal oxide framework on a conductive glass, placing a whole chip in a solvent flask, fast injecting a caesium source, and obtaining the transition metal oxide / quantum dot Bulk Heterojunction; removing the transition metal oxide / quantum dot Bulk Heterojunction from a reaction container for the follow up process,and forming the light emitting diode; the light emitting diode comprises metal counter electrodes, an electron injection and transmission layer, a transition metal oxide / quantum dot Bulk Heterojunction quantum dot luminescent layer, the cavity injection and transmission layer, an ITO transparent electrode, a glass substrate and a power supply; the method uses the formation in-situ method to prepare the Bulk Heterojunction, thus improving the interface bonding strength between the metal oxide nanometer crystals and quantum dots; in addition, the method can save the tedious quantum dot post-treatment steps, thus simplifying the preparation process, and preventing quantum dot pollutions.

Description

technical field [0001] The patent of the present invention mainly relates to the field of LED light-emitting devices, in particular to a light-emitting layer with excellent preparation performance, specifically a method for preparing a transition metal oxide / quantum dot heterojunction by an in-situ generation method and its application in light-emitting diodes. Background technique [0002] At present, with the development of quantum dot technology, QLED light-emitting diodes have also ushered in new developments, because they meet the high standards that people are increasingly pursuing, and the self-luminous QLED light-emitting diode technology has also received more and more attention. It must become the mainstream of the next generation of display devices in the future. However, the current bottleneck in the research and development of QLEDs is the unbalanced injection of holes and electrons, which leads to low efficiency and cannot be widely used in applications. To th...

AI Technical Summary

Problems solved by technology

Furthermore, the high HOMO energy level of transition metal oxides can be regulated, a fast channel for hole transport can be constructed, the hole transport rate can be greatly increased, the electron-hole transport can be balanced, and the performance of quantum dot light-emitting diodes can be finally improved. However, due to the transition metal oxide The porosity of the framework is also at the nanoscale. Whether the quantum dots can be perfectly combined with the transition metal oxide framework remains to be studied. Therefore, we propose a synthesis method that can improve this problem.

Images