Reading method and device of memory unit

Abstract

The invention discloses a reading method and device of a memory unit. The method comprises the steps as follows: receiving a reading instruction; determining the current reading voltage according to the current temperature of a memory chip and the current temperature characteristic of the memory unit; applying the current reading voltage to the memory unit of the memory chip. According to the reading method of the memory unit, the current reading voltage is determined according to the current temperature of the memory chip and the current temperature characteristic of the memory unit and applied to the memory unit of the memory chip, so that the current variation of the memory unit is reduced by changing the reading voltage, and the reading performance of the memory unit is improved.

Description

technical field [0001] The present invention relates to the technical field of memory, in particular to a method and device for reading a memory unit. Background technique [0002] Flash memory (flash memory) is a kind of non-volatile memory (Non-volatile memory), which uses a nonlinear macro-cell mode inside, has the advantages of large capacity and fast rewriting speed, and is suitable for storing large amounts of data. [0003] In a flash memory, a memory cell can be regarded as a metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET). figure 1 It is a common MOSFET structure diagram, including a gate 20 , a source 21 , a drain 22 , a P-type silicon semiconductor substrate 23 , and a tunnel oxide layer 24 . The connection between them is as follows: P-type silicon semiconductor substrate 23 diffuses two N-type regions, and a layer of tunneling oxide layer 24 is covered on the top of P-type silicon semiconductor subst...

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Problems solved by technology

The existing memory cell reading method is to apply a fixed read voltage to the memory cell, but due to the characteristics of the memory chip itself, when the temperature of the memory chip is higher than a certain value or lower than a certain value, the threshold voltage of the memory cell will change , if the read voltage is constant, the change of the threshold voltage will cause a large change in the current flowing through the memory cell. If a fixed read voltage is applied, in order to get the correct read result, the current comparator is required to be able to output according to different input Correct high and low levels, thus greatly increasing the design complexity of the current comparator and increasing the difficulty of reading

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