Unlock instant, AI-driven research and patent intelligence for your innovation.

non-volatile memory device

A non-volatile, memory technology, used in information storage, static memory, digital memory information, etc., can solve the problems of increasing the manufacturing cost of memory devices, reducing circuit complexity and reducing product yield, and improving production yield and reducing circuit. The effect of complexity

Active Publication Date: 2020-08-18
IOTMEMORY TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The higher the complexity of the circuit will greatly reduce the product yield, and increase the manufacturing cost of the memory device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • non-volatile memory device
  • non-volatile memory device
  • non-volatile memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0085] figure 1 For a schematic diagram of a non-volatile memory device shown according to an embodiment of the present invention, please refer to figure 1 . The non-volatile memory device includes a memory cell array 102, a column decoder 104, a high-voltage decoder 106, a row decoder 108, and a sense amplifier 110. The memory cell array 102 is coupled to the column decoder 104 and the high-voltage decoder. 106 and the row decoder 108 , the sense amplifier 110 is coupled to the row decoder 108 . Further, the memory cell array 102 includes a plurality of memory cells, and each memory cell may be coupled to the column decoder 104 through the word line, and coupled to the row decoder 108 and the sense amplifier 110 through the bit line.

[0086] The detailed structure of the memory cell can be as follows Figure 2A shown in Figure 2A In an embodiment, the memory cell MC may include a stack structure 220, an auxiliary gate dielectric layer 230, an erase gate dielectric layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A non-volatile memory apparatus having a memory cell array, a row decoder and a high voltage decoder is provided. The high voltage decoder includes a plurality of transmission channel circuits and a plurality of first pull down circuit. Each of the transmission channel circuits limits a current transmitted to a corresponding erase gate according to an erase gate control signal when an erasing operation performed on a corresponding memory cell. The first pull down circuits connect the erase gates of unselected memory cell to a ground when the erasing operation performed on selected memory cells.

Description

technical field [0001] The present invention relates to a memory device, and in particular to a non-volatile memory device. Background technique [0002] Non-volatile memory has been widely used in personal computers and electronic devices due to its advantages that data can be stored, read, and erased multiple times, and the stored data will not disappear after power failure. [0003] With the advancement of memory-related technologies, the capacity of memory devices is increasing, the size is becoming smaller and smaller, and the circuit complexity is increasing day by day. The higher the complexity of the circuit, the lower the yield rate of the product will be greatly reduced, and the manufacturing cost of the memory device will be increased. Contents of the invention [0004] The invention provides a non-volatile memory device, which can effectively reduce the circuit complexity of the non-volatile memory device and improve the production yield of the non-volatile me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10
CPCG11C7/1063G11C7/109
Inventor 黄义欣
Owner IOTMEMORY TECH