How to make a mim capacitor

Abstract

The invention provides a fabrication method of an MIM capacitor. The fabrication method of the MIM capacitor includes following steps: providing an insulation medium, and forming a first groove on thesurface of the insulation medium; performing the first high-temperature rapid thermal annealing on the insulation medium with a second groove; forming a silicon oxide layer at one side, which the first groove belongs to, of the insulation medium to enable the silicon oxide layer to be far from the surface of the insulation medium and form the second groove corresponding to the first groove; performing vacuum high-temperature rapid annealing on the silicon oxide layer to enable a corner of the second groove to be smooth; processing the surface, far from the insulation medium, of the silicon oxide layer by employing a corrosive solution to increase the surface roughness of the silicon oxide layer; and forming a buffer metal layer and a capacitor structure on the silicon oxide layer with theincreased surface roughness.

Description

【Technical field】 [0001] The present invention relates to the technical field of capacitors, in particular, to a manufacturing method of MIM capacitors 【Background technique】 [0002] In VLSI, capacitors are one of the commonly used passive devices, which are usually integrated in active devices such as bipolar transistors or complementary metal-oxide-semiconductor transistors. At present, the technology of manufacturing capacitors can be divided into two types: using polysilicon as the electrode and using metal as the electrode. Using polysilicon as the electrode will cause a lack of carriers, so that when the voltage across the capacitor changes, the capacitance will also change. Therefore, Capacitors with polysilicon electrodes cannot maintain the linearity requirements of today's logic circuits, while capacitors with metal electrodes do not have this problem. Such capacitors are generally called MIM capacitors (Metal-Insulator-Metal Capacitor) [0003] The existing manu...

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Problems solved by technology

The second problem, each process faces different problems, so it is the most difficult to solve

In addition, since the upper electrode is formed on the trench, there are corners on the upper electrode, so there will be parasitic corner capacitance, which also affects the reliability of the MIM capacitor.

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