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Graphene field effect device manufacturing method

A graphene field and graphene technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high doping and difficult intrinsic characteristics of graphene devices

Inactive Publication Date: 2015-10-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The prepared graphene devices are usually difficult to maintain their good intrinsic properties, or have random high doping

Method used

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  • Graphene field effect device manufacturing method
  • Graphene field effect device manufacturing method
  • Graphene field effect device manufacturing method

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Embodiment Construction

[0015] The invention provides a preparation method of a graphene field effect device. In this preparation method, through the improvement of substrate cleaning steps, metal electrode deposition steps, etc., the excellent intrinsic characteristics of graphene are kept as much as possible in the preparation process, and graphene with better performance than the existing technology can be prepared. Graphene Field Effect Devices.

[0016] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0017] In an exemplary embodiment of the present invention, a method for preparing a graphene field effect device is provided. figure 1 It is a flowchart of a method for preparing a graphene field effect device according to an embodiment of the present invention. Such as figure 1 As shown, the p...

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Abstract

The invention provides a graphene field effect device manufacturing method. The manufacturing method comprises steps: A, inorganic cleaning and organic cleaning are carried out on a silicon-based silicon oxide substrate; B, graphene is transferred to the upper surface of the silicon-based silicon oxide substrate after cleaning, and the graphene and the silicon-based silicon oxide substrate are bonded; C, an electron beam exposure method is adopted to carve electrode graphs of a source and a drain of the graphene field effect device on the graphene; D, an electron beam evaporation method is adopted to deposit metal electrodes in the above electrode graphs; and E, extra metal and residual colloid after electron beam exposure are removed, the source and the drain of the graphene field effect device are formed, doping silicon on the back face of the silicon-based silicon oxide substrate introduces the gate of the graphene field effect device, and the graphene field effect device is manufactured. Intrinsic properties of the graphene are well kept as much as possible in the manufacturing process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a preparation method of a graphene field effect device. Background technique [0002] Graphene is a monoatomic layer of graphite, a two-dimensional crystal composed of carbon atoms on a single-layer honeycomb crystal lattice. It has many excellent mechanical, thermal, electrical, and optical properties. For example, graphene is the hardest nanomaterial found so far, with ultra-high thermal conductivity and ultra-high carrier mobility, graphene is highly transparent, and single-layer graphene can absorb 2.3% of normal incident Light. Therefore, graphene has broad application prospects in electronic devices and optoelectronic devices. The preparation process of graphene devices is the basis of these applications, and it is also the most important link that determines the performance of devices. [0003] At present, the processes for preparing graphene field effect devices...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/28H01L29/16
CPCH01L21/02052H01L29/1606H01L29/401
Inventor 尹伟红王玉冰韩勤杨晓红
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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