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Group III nitride groove gate normally-closed P-channel HEMT device and manufacturing method thereof

A nitride and groove gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the theoretical limit is still very large, the performance is far from the theoretical value, etching damage and interface state The problem is difficult to solve, etc., to achieve the optimization of normally-off characteristics and conduction characteristics, avoid etching damage, and improve device performance.

Pending Publication Date: 2021-12-03
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the etching damage and interface state problems caused by etching, the performance of existing p-channel HEMT devices is far from the theoretical value.
The performance of the device has reached a relatively high level of p-channel GaN HEMT devices currently being studied, but there is still a long way to go from the theoretical limit of GaN, and there is still a lot of room for improvement in the output current, on-resistance and switch ratio of the device.

Method used

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  • Group III nitride groove gate normally-closed P-channel HEMT device and manufacturing method thereof
  • Group III nitride groove gate normally-closed P-channel HEMT device and manufacturing method thereof
  • Group III nitride groove gate normally-closed P-channel HEMT device and manufacturing method thereof

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Experimental program
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preparation example Construction

[0049] Further, the preparation method may also include:

[0050] A mask is set on the third semiconductor, and a local area of ​​the third semiconductor distributed under the gate is removed by band-selective etching, and the etching depth reaches the second semiconductor to form a groove structure;

[0051] A continuous gate dielectric layer is deposited and formed at least on the groove wall of the groove structure.

[0052] Further, the etching method with energy band selectivity includes photo-electrochemical (PEC, Photo-electrochemical) etching technology, but is not limited thereto.

[0053] In some more specific embodiments, the preparation method may also include:

[0054] providing a heterojunction comprising a first semiconductor and a second semiconductor, the second semiconductor being formed on the first semiconductor and having a bandgap narrower than that of the first semiconductor, the heterojunction having 2DHG formed therein;

[0055] disposing a third sem...

Embodiment 1

[0068] Embodiment 1 The polarization effect-based D-2DHG groove gate normally-off HEMT provided in this embodiment includes a GaN buffer layer, an AlGaN barrier layer (i.e. the first semiconductor), a GaN channel layer grown on the substrate in sequence. layer (that is, the second semiconductor) and an InGaN channel layer (that is, the third semiconductor), wherein the GaN channel layer and the AlGaN barrier layer form a first heterojunction, and 2DHG is formed in the first heterojunction, and the GaN channel layer forms a second heterojunction with the InGaN channel layer, and 2DHG is also formed in the second heterojunction. The region corresponding to the gate in the InGaN channel layer is removed to form a groove structure, and the groove structure is arranged in cooperation with the gate structure. The gate structure includes a gate and a gate dielectric layer, the gate is partially disposed in the groove structure, the gate dielectric layer is at least disposed between t...

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Abstract

The invention discloses a group III nitride groove gate normally-closed P-channel HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof. The HEMT device comprises a double heterojunction structure formed by a first semiconductor, a second semiconductor and a third semiconductor, and the double heterojunction has double two-dimensional hole gas (2DHG). The third semiconductor has a band gap smaller than that of the second semiconductor, is easy to remove by adopting a photoelectrochemical corrosion (PEC) technology with energy band selection, and forms a groove structure; and the groove structure is matched with the gate structure, so that the two-dimensional hole gas in the second semiconductor corresponding to the region below the gate can be exhausted. According to the invention, the groove gate normally-closed P-channel HEMT device with large output current and low on-resistance can be effectively realized.

Description

technical field [0001] The invention relates to a normally-off P-channel transistor, in particular to a group III nitride D-2DHG (Double-2dimentional hole gas, two-dimensional hole gas) groove gate normally-off HEMT ( A High Electron Mobility Transistor) device and a preparation method thereof belong to the technical field of semiconductors. Background technique [0002] Power electronic devices are the core components of power electronic systems. With the rapid development of power electronics technology, the limitations of traditional silicon materials and second-generation semiconductor materials have become increasingly prominent, due to the urgent needs of power systems in terms of high frequency, low loss and high power capacity. The third-generation wide-bandgap semiconductor materials represented by GaN and SiC have been developed rapidly. GaN has the characteristics of large band gap, high saturation hole drift velocity, large critical breakdown electric field, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/423H01L29/10H01L21/335
CPCH01L29/7781H01L29/1054H01L29/4236H01L29/66462H01L29/423H01L29/10H01L29/778H01L29/66409
Inventor 于国浩张宝顺张丽张晓东宋亮吴冬东
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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