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Transient voltage suppressor and manufacturing method thereof

A technology for transient voltage suppression and manufacturing methods, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing device area and manufacturing cost, and achieve improved discharge capacity, reduced parasitic capacitance, and protection Effects of improved characteristics and reliability

Inactive Publication Date: 2018-06-01
SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently commonly used transient voltage suppressors (such as trench transient voltage suppressors) generally can only achieve unidirectional protection. If bidirectional protection is required, multiple transient voltage suppressors must be connected in series or in parallel, but this will increase Large device area and manufacturing cost

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  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] see figure 1 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention. The transient voltage suppressor 100 includes a P-type substrate, a first N-type epitaxy formed on the P-type substrate, a P-type epitaxy formed on the surface of the first N-type epitaxy, and a Epitaxial and extending to the trench in the first N-type epitaxy, the first P-type implantation region formed on the surface of the trench of the first N-type epitaxy, and the first P-type impl...

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Abstract

The invention relates to a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor comprises a P-type substrate, a first N-type epitaxy formed on the P-type substrate, a second P-type epitaxy formed on the surface of the first N-type epitaxy, a trench which penetrates through the P-type epitaxy and extends into first N-type epitaxy, a first P-type injection region formed on the surface of the trench of the first N-type epitaxy, silicon oxide formed on the surface of the first P-type injection region on the side wall of the trench and extending to the surface of the side wall of the trench of the P-type epitaxy, polycrystalline silicon formed on the first P-type injection region at the bottom of the trench and the surface of the silicon oxide, a second N-type epitaxy formed in the trench and on the polycrystalline silicon and a second P-type injection region is formed on the surface of the second N-type epitaxy.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. The low-capacitance transient voltage suppressor is suitable for the protection of high-frequency circuits, because it can reduce the interference of parasitic capacitance to the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a va...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/82
CPCH01L27/0255H01L21/82H01L27/0296
Inventor 不公告发明人
Owner SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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