Semiconductor structures and methods of forming them
A technology of semiconductor and gate structure, which is applied in the field of semiconductor structure and its formation, can solve the problems that the electrical performance of transistors needs to be improved, and achieve the effects of weakening the edge electric field effect, improving electrical performance, and improving uniformity
Active Publication Date: 2020-09-08
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, in the prior art, after introducing the work function layer, the electrical performance of the transistor still needs to be improved.
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Embodiment Construction
[0011] It can be seen from the background art that the electrical performance of the fin field effect transistor in the prior art still needs to be improved.
[0012] In semiconductor structures with high-k metal gates, there are still many problems to be solved, one of which is the matching of work function, because the work function will directly affect the threshold voltage (Vt) of the device and the performance of the transistor. Therefore, the work function must be adjusted to the appropriate operating range of the semiconductor device.
[0013] A method for forming a transistor in the prior art includes: providing a substrate; forming a dummy gate structure on the substrate; forming source and drain doped regions in the substrate on both sides of the dummy gate structure; forming a dielectric layer on the substrate; removing the dummy gate structure to form an opening; sequentially forming a gate dielectric layer and a work function layer at the bottom of the opening; fi...
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Abstract
The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises steps: a substrate is provided; a dielectric layer is formed on the substrate; a first opening is formed, wherein the bottom part of the first opening comprises at least two areas with unequal equivalent work function values, and the at least two areas comprise a first area and a second area; a gate dielectric layer is formed; a first transfer layer is formed; a protective layer is formed on the first transfer layer in the second area; a first cap layer is formed on the first transfer layer; first annealing treatment is carried out to form a first work function adjustment layer; the first cap layer and the first transfer layer after the first annealing treatment are removed; the protective layer is removed to expose the gate dielectric layer, and a gate opening is formed; and a metal layer is formed in the gate opening. The technical scheme of the invention can improve the radiofrequency performance of the formed transistor, and the electrical properties of the semiconductor structure are improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. The geometric dimensions of semiconductor devices continue to shrink following Moore's Law. As the most basic semiconductor device, the size of the transistor decreases as the size of the semiconductor device decreases. [0003] As the size of transistors shrinks, the problem of device leakage current becomes more and more serious. One of the main reasons for the increase of the leakage current of the semiconductor device is that the thickness of the traditional gate dielectric layer is continuously reduced. The currently proposed solution is to replace the traditional silicon dioxide gate dielectric material wi...
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IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66545H01L29/66795H01L29/785H01L29/512H01L29/517
Inventor 张海洋王彦蒋鑫
Owner SEMICON MFG INT (SHANGHAI) CORP