Electric potential control rapid transverse insulated gate bipolar transistor
A technology of bipolar transistors and insulated gates, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the difficulty of further optimization of the relationship between off-time and on-voltage drop constraints, work reliability problems, etc., and achieve the suppression of NDR phenomenon, improving job stability, and optimizing the effect of trade-off relations
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[0041] Example 1:
[0042] Such as Figure 4 As shown, a potential-controlled fast lateral insulated gate bipolar transistor includes an SOI substrate, a drift region, an anode region, a cathode region, and a gate region. It is characterized in that the SOI substrate includes a buried oxide layer 5, a liner The bottom layer 6 and the top silicon layer.
[0043] The buried oxygen layer 5 covers the substrate layer 6.
[0044] The top silicon layer is located on the buried oxide layer 5.
[0045] The conductive functional area of a potential-controlled fast lateral insulated gate bipolar transistor is formed in the top silicon layer.
[0046] The drift region is attached above the buried oxide layer 5, and the drift region is composed of an N base region 9.
[0047] The anode region and the cathode region are located on both sides of the N base region 9 respectively.
[0048] The gate area is attached above the cathode area.
[0049] The substrate layer 6 is made of P-type or N-type silic...
Example Embodiment
[0066] Example 2:
[0067] A potential-controlled fast lateral insulated gate bipolar transistor, including an SOI substrate, a drift region, an anode region, a cathode region, and a gate region, and is characterized in that: the SOI substrate includes a buried oxide layer 5, a substrate layer 6 and The top silicon layer.
[0068] The buried oxygen layer 5 covers the substrate layer 6.
[0069] The top silicon layer is located on the buried oxide layer 5.
[0070] The conductive functional area of a potential-controlled fast lateral insulated gate bipolar transistor is formed in the top silicon layer.
[0071] The drift region is attached above the buried oxide layer 5, and the drift region is composed of an N base region 9.
[0072] The anode region and the cathode region are located on both sides of the N base region 9 respectively.
[0073] The gate area is attached above the cathode area.
[0074] The substrate layer 6 is made of P-type or N-type silicon material, and its typical im...
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