Electric potential control rapid transverse insulated gate bipolar transistor

A technology of bipolar transistors and insulated gates, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the difficulty of further optimization of the relationship between off-time and on-voltage drop constraints, work reliability problems, etc., and achieve the suppression of NDR phenomenon, improving job stability, and optimizing the effect of trade-off relations

Active Publication Date: 2018-06-05
CHONGQING UNIV
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In the existing LIGBT structure of the anode extraction channel, through a certain anode structure design, although the turn-off speed has been improved, there are still operational reliability pro

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electric potential control rapid transverse insulated gate bipolar transistor
  • Electric potential control rapid transverse insulated gate bipolar transistor
  • Electric potential control rapid transverse insulated gate bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0041] Example 1:

[0042] Such as Figure 4 As shown, a potential-controlled fast lateral insulated gate bipolar transistor includes an SOI substrate, a drift region, an anode region, a cathode region, and a gate region. It is characterized in that the SOI substrate includes a buried oxide layer 5, a liner The bottom layer 6 and the top silicon layer.

[0043] The buried oxygen layer 5 covers the substrate layer 6.

[0044] The top silicon layer is located on the buried oxide layer 5.

[0045] The conductive functional area of ​​a potential-controlled fast lateral insulated gate bipolar transistor is formed in the top silicon layer.

[0046] The drift region is attached above the buried oxide layer 5, and the drift region is composed of an N base region 9.

[0047] The anode region and the cathode region are located on both sides of the N base region 9 respectively.

[0048] The gate area is attached above the cathode area.

[0049] The substrate layer 6 is made of P-type or N-type silic...

Example Embodiment

[0066] Example 2:

[0067] A potential-controlled fast lateral insulated gate bipolar transistor, including an SOI substrate, a drift region, an anode region, a cathode region, and a gate region, and is characterized in that: the SOI substrate includes a buried oxide layer 5, a substrate layer 6 and The top silicon layer.

[0068] The buried oxygen layer 5 covers the substrate layer 6.

[0069] The top silicon layer is located on the buried oxide layer 5.

[0070] The conductive functional area of ​​a potential-controlled fast lateral insulated gate bipolar transistor is formed in the top silicon layer.

[0071] The drift region is attached above the buried oxide layer 5, and the drift region is composed of an N base region 9.

[0072] The anode region and the cathode region are located on both sides of the N base region 9 respectively.

[0073] The gate area is attached above the cathode area.

[0074] The substrate layer 6 is made of P-type or N-type silicon material, and its typical im...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an electric potential control rapid transverse insulated gate bipolar transistor which comprises an SOI (Silicon-On-Insulator) substrate, a drift area, an anode area, a cathodearea and a grid area. The transistor is characterized in that the SOI substrate comprises a buried oxide layer, a substrate layer and a top silicon layer; the buried oxide layer is arranged on the substrate layer in a covering manner; the top silicon layer is positioned on the buried oxide layer; a conductive functional area of the electric potential control rapid transverse insulated gate bipolar transistor is formed in the top silicon layer; the drift area is adhered to the part above the buried oxide layer; the drift area consists of N base areas; the anode area and the cathode area are respectively positioned on two sides of the N base areas; the grid area is adhered to the part above the cathode area.

Description

technical field [0001] The invention relates to a conductance modulation high-voltage power device in the technical field of semiconductor power electronic devices, in particular to a potential-controlled fast lateral insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT: Insulated Gate Bipolar Transistor) is a mainstream component in modern power electronic equipment. The main features of IGBT structure and work are MOS gate control and conductance modulation bipolar carrier conduction mode, so it has the advantages of simple driving and large current conduction capability. [0003] The IGBT made of SOI (Silicon On Insulator) as the substrate material is usually a lateral structure, referred to as SOI-based LIGBT, especially the thin silicon SOI-based LIGBT, which is a key component of SOI high-voltage integrated circuits. Advantages of integrating with other functional devices. While the conductance modulation effect gre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/06H01L29/739
CPCH01L29/0684H01L29/7394
Inventor 陈文锁廖瑞金李晓玲蒋玉宇
Owner CHONGQING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products