Electric potential control rapid transverse insulated gate bipolar transistor

Abstract

The invention discloses an electric potential control rapid transverse insulated gate bipolar transistor which comprises an SOI (Silicon-On-Insulator) substrate, a drift area, an anode area, a cathodearea and a grid area. The transistor is characterized in that the SOI substrate comprises a buried oxide layer, a substrate layer and a top silicon layer; the buried oxide layer is arranged on the substrate layer in a covering manner; the top silicon layer is positioned on the buried oxide layer; a conductive functional area of the electric potential control rapid transverse insulated gate bipolar transistor is formed in the top silicon layer; the drift area is adhered to the part above the buried oxide layer; the drift area consists of N base areas; the anode area and the cathode area are respectively positioned on two sides of the N base areas; the grid area is adhered to the part above the cathode area.

Description

technical field [0001] The invention relates to a conductance modulation high-voltage power device in the technical field of semiconductor power electronic devices, in particular to a potential-controlled fast lateral insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT: Insulated Gate Bipolar Transistor) is a mainstream component in modern power electronic equipment. The main features of IGBT structure and work are MOS gate control and conductance modulation bipolar carrier conduction mode, so it has the advantages of simple driving and large current conduction capability. [0003] The IGBT made of SOI (Silicon On Insulator) as the substrate material is usually a lateral structure, referred to as SOI-based LIGBT, especially the thin silicon SOI-based LIGBT, which is a key component of SOI high-voltage integrated circuits. Advantages of integrating with other functional devices. While the conductance modulation effect gre...

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Problems solved by technology

[0009] In the existing LIGBT structure of the anode extraction channel, through a certain anode structure design, although the turn-off speed has been improved, there are still operational reliability problems caused by the NDR phenomenon, or additional drive requirements, or turn-off time and turn-on Problems that are difficult to further optimize the constraint relationship between pressure drops, etc.

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