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Heterojunction potential controlled insulated grid bipolar transistor

A technology of bipolar transistors and heterojunctions, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effects of improving work stability, optimizing tradeoffs, and suppressing NDR phenomena

Active Publication Date: 2018-06-22
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the actual working circuit, most of the failures caused by overheating, overcurrent, overvoltage, and transient high current and high voltage, from the perspective of device working mechanism, the latch-up effect caused by high current is still its typical failure mechanism

Method used

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  • Heterojunction potential controlled insulated grid bipolar transistor
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  • Heterojunction potential controlled insulated grid bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] like figure 1 As shown, a heterojunction potential-controlled insulated gate bipolar transistor is characterized in that it includes an SOI substrate, a drift region, an anode region, a cathode region and a gate region.

[0042] The SOI substrate includes a substrate layer 1, a dielectric layer 2 and a top layer of silicon.

[0043] The substrate layer 1 is a P-type or N-type doped silicon material; its typical impurity concentration is the 14th power;

[0044] The dielectric layer 2 covers the substrate layer 1, and the dielectric layer 2 is made of silicon dioxide. The typical thickness is 0.5μm to 5μm according to the withstand voltage requirements of the designed device.

[0045] The top layer silicon covers the dielectric layer 2, and the top layer silicon is a P-type or N-type doped silicon material.

[0046] The conductive functional region of a heterojunction potential controlled insulated gate bipolar transistor is formed in the top layer silicon.

[0047] ...

Embodiment 2

[0064] like figure 2 As shown, a heterojunction potential-controlled insulated gate bipolar transistor is characterized in that it includes an SOI substrate, a drift region, an anode region, a cathode region and a gate region.

[0065] The SOI substrate includes a substrate layer 1, a dielectric layer 2 and a top layer of silicon.

[0066] The substrate layer 1 is a P-type or N-type doped silicon material; its typical impurity concentration is the 14th power;

[0067] The dielectric layer 2 covers the substrate layer 1, and the dielectric layer 2 is made of silicon dioxide. The typical thickness is 0.5μm to 5μm according to the withstand voltage requirements of the designed device.

[0068] The top layer silicon covers the dielectric layer 2, and the top layer silicon is a P-type or N-type doped silicon material.

[0069] The conductive functional region of a heterojunction potential controlled insulated gate bipolar transistor is formed in the top layer silicon.

[0070]...

Embodiment 3

[0087] like image 3 As shown, a heterojunction potential-controlled insulated gate bipolar transistor is characterized in that it includes an SOI substrate, a drift region, an anode region, a cathode region and a gate region.

[0088] The SOI substrate includes a substrate layer 1, a dielectric layer 2 and a top layer of silicon.

[0089] The substrate layer 1 is a P-type or N-type doped silicon material; its typical impurity concentration is the 14th power;

[0090] The dielectric layer 2 covers the substrate layer 1, and the dielectric layer 2 is made of silicon dioxide. The typical thickness is 0.5μm to 5μm according to the withstand voltage requirements of the designed device.

[0091] The top layer silicon covers the dielectric layer 2, and the top layer silicon is a P-type or N-type doped silicon material.

[0092] The conductive functional region of a heterojunction potential controlled insulated gate bipolar transistor is formed in the top layer silicon.

[0093] ...

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Abstract

The invention discloses a heterojunction potential controlled insulated grid bipolar transistor. The heterojunction potential controlled insulated grid bipolar transistor is characterized by comprising an SOI substrate, a drift region, a positive electrode region, a negative electrode region and a grid region, wherein the SOI substrate comprises a substrate layer, a dielectric layer and top-layersilicon, the substrate layer is a P-type or N-type doping silicon material, the dielectric layer covers the substrate layer, the dielectric layer is a silicon dioxide material, the top layer silicon covers the dielectric layer and is a P-type or N-type doping silicon material, a conductive functional region of the heterojunction potential controlled insulated grid bipolar transistor is formed in the top layer silicon, the drift region is attached onto a part above the dielectric layer and comprises an N base region, the positive electrode region and the negative electrode region are respectively arranged at two sides of the N base region, the positive electrode region comprises a silicon / germanium silicon heterojunction and also comprises a potential control structure, the negative electrode region comprises a silicon / germanium silicon heterojunction, and the grid electrode region is attached onto a part above the negative electrode region.

Description

technical field [0001] The invention relates to a conductance modulation type high-voltage power device in the technical field of semiconductor power electronic devices, in particular to a heterojunction potential-controlled insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT: Insulated Gate Bipolar Transistor) is a mainstream component in modern power electronic equipment. IGBTs made of silicon-on-insulator (SOI: Silicon On Insulator) as the substrate material are usually lateral structures, referred to as SOI-based LIGBTs, especially thin-silicon-layer SOI-based LIGBTs, which are a key component of SOI high-voltage integrated circuits. Advantages of integration with other functional devices. [0003] From the device structure and working mechanism, the most important characteristics of IGBT devices are the PNPN four-layer structure controlled by the MOS gate and the conductance modulation effect of the drift region. Du...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L21/331H01L29/06
CPCH01L29/0684H01L29/66325H01L29/7393
Inventor 陈文锁廖瑞金李晓玲蒋玉宇
Owner CHONGQING UNIV
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