Novel power semiconductor device

A technology of power semiconductors and devices, applied in the direction of semiconductor devices, electrical components, circuits, etc.

Inactive Publication Date: 2014-06-25
HANGZHOU ENNENG TECH
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SA-LIGBT has a negative resistance phenomenon NDR (Negative Differential Resistance), which is caused by the sudden switching of the device between the two working modes of LDMOS and LIGBT

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel power semiconductor device
  • Novel power semiconductor device
  • Novel power semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] image 3 Shown is a top view structure diagram of a new type of power semiconductor device, including the anode P + Zone (5), anode N + Region (4), N-type drift region (3), emitter N + region (9), P-type channel region (6) and P-type pillar regions (17, 18).

[0024] The anode of the structure of the present invention adopts N + District (4) and P + In the overlapping short-circuit structure of the region (5), there are two parts of the P-type column region (17, 18) in the drift region, which are respectively connected with the P-type channel region (6) of the cathode and the P-type channel region (6) of the anode. + Area (5) is connected. Through the adjustment of these structures, the NDR phenomenon no longer occurs, the latch-up effect during high-current operation is effectively suppressed, the switching speed is greatly improved, and the withstand voltage of the device is also improved to a certain extent.

Embodiment 2

[0026] Figure 4 Shown is a new type of power semiconductor device along the anode N + Sectional drawing of the area. Including substrate (1), anode N + region (4), anode metal (12), N-type drift region (3), field oxide layer (16), cathode P + region (8), cathode P-type body region (7), P-type channel region (6), emitter N + region (9), cathode metal (11), polysilicon gate (14), LIGBT device gate oxide layer (10) and polysilicon gate metal (13).

[0027] When the device is just turned on, the anode N with P-type + \P + Fast SOI LIGBT device inversion channel formation with overlapping shorts. When a positive voltage is applied to the anode, the electron current in the inversion channel is injected into the drift region (3) and passes through the anode N + Area (4) is extracted, and the device works in LDMOS state at this time, and there is no conductance modulation phenomenon.

Embodiment 3

[0029] Figure 5 Shown is a new type of power semiconductor device along the anode P + Sectional drawing of the area. Including substrate (1), anode P + region (5), anode metal (12), N-type drift region (3), field oxide layer (16), cathode P + region (8), cathode P-type body region (7), P-type channel region (6), emitter N + region (9), cathode metal (11), polysilicon gate (14), LIGBT device gate oxide layer (10), polysilicon gate metal (13) and P-type pillar regions (17, 18).

[0030] Figure 5 and Figure 4 The difference is that it is more Figure 4 There are two more P-type pillar regions (17, 18), and its anode N + Zone (4) consists of anode P + District (5) replaces.

[0031] In order to make the NDR phenomenon of the anode short-circuit structure no longer occur, the resistance between the P-type pillars (4) should be large enough, so that a voltage difference of 0.7V can be reached when the current is extremely small, so that the anode P + (5) and the P-type pi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a semiconductor device, and discloses a novel power semiconductor device comprising a substrate (1), an anode P+ region (5), an anode N+ region (4), anode metal (12), an N-type drift region (3), a field oxide layer (16), a cathode P+ region (8), a cathode P-type body region (7), a P-type channel region (6), an emitting electrode N+ region (9), cathode metal (11), a poly-silicon gate (14), a gate oxide layer (10), poly-silicon gate metal (13) and P-type cylinder regions (17,18). The two P-type cylinder regions (17, 18) are additionally arranged in the P-type channel region (6) and the anode P+ region (5), and the structure that the anode P+ region (5) and the anode N+ region (4) are arranged in an alternating way is adopted so that the inverse resistance effect of the device is inhibited, the latch-up effect of the device in the high-current working state is overcome, turn-off speed and voltage resistance of the device are enhanced and power consumption of the device is reduced.

Description

technical field [0001] The invention relates to semiconductor power device technology. Background technique [0002] Lateral Insulated-Gate Bipolar Transistor LIGBT (Lateral Insulated-Gate Bipolar Transistor) is often used in the output stage of high-voltage power drive integrated circuits due to its low turn-on voltage drop and high input impedance to improve the lateral double-diffused metal oxide The contradiction between the withstand voltage and on-resistance of LDMOS (Lateral Double-diffused MOSFET) semiconductor field effect transistor. [0003] figure 1 The structural diagram of a traditional n-channel LIGBT device is given, in which, 1 is a P-type or N-type substrate, 2 is a buried oxide layer, 3 is an N-type drift region, and 4 is the same doping type as the N-type drift region 3 N-type buffer layer, 5 is the anode P+ region, 6 is the P-type channel region of the device, 7 is the P-type region with a higher concentration than the P-type channel region 6, and 8 is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/417
CPCH01L29/7393H01L29/0615H01L29/0834
Inventor 何敏谢刚王柳敏王珏
Owner HANGZHOU ENNENG TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap