Asymmetrical fast thyristor

A thyristor, asymmetric technology, applied in the direction of thyristor, electrical components, circuits, etc., can solve the problems of overall device stability and reliability adverse effects, flow capacity limitation, poor dynamic characteristics, etc., to improve the on-state capacity and reduce Store charge, improve the effect of restoring softness

Active Publication Date: 2012-05-30
HUBEI TECH SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When applied to series inverters, the flow capacity is limited due to the large voltage drop
And due to poor dynamic characteristics, it is easy to have adverse effects on the stability and reliability of the overall device operation

Method used

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  • Asymmetrical fast thyristor
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  • Asymmetrical fast thyristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Example 1 as Figure 4 shown. The asymmetric thyristor includes a tube shell and a PNPN four-layer three-terminal semiconductor chip packaged in the tube shell. The junction depth of P1 anode area 1 is 15-80 μm; the junction depth of P2 area 3 at the cathode end is 45-130 μm, and the surface concentration is 1.5-8×10 17 cm -3 ; The thickness of the long base region 2 of N1 is 110-350 μm; the P in the anode region 1 of P1 + The surface concentration of the high concentration region 8 is 2×10 19 ~9.5×10 20 cm -3 . The junction depth of the P1 anode region 1 of the semiconductor chip is 20% to 70% of the junction depth of the P2 region 3 at the cathode end, and the thickness of the N1 long base region 2 is 20% to 30% thinner than that of a general thyristor. The P in the P1 anode region 1 + High concentration region 8 is formed by single window diffusion, P + The junction depth of the high concentration region 8 is smaller than the junction depth of the anode regio...

Embodiment 2

[0035] Example 2 as Figure 5 shown. The difference from Example 1 is that the P+ high-concentration region 9 in the P1 anode region 1 is formed by multi-window diffusion, and the P + The junction depth of the high concentration region 9 is smaller than the junction depth of the anode region 1 of P1.

Embodiment 3

[0036] Example 3 as Figure 6 shown. The difference from Example 1 is that the P+ high-concentration region 10 in the anode region of P1 is formed by multi-window diffusion, and the P + The junction depth of the high concentration region 10 is greater than the junction depth of the anode region of P1.

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Abstract

The invention provides an asymmetrical fast thyristor, belonging to the technical field of a power semiconductor device, and mainly aiming at solving the problems of the large pressure drop, the wore dynamic characteristic and the like of the existing fast thyristor when being applied to series inversion. The asymmetrical fast thyristor is mainly characterized by comprising a thyristor shell and a semiconductor chip which is packed in the thyristor shell and has a PNPN four-layer and three-end structure; the junction depth of a P1 anode area 1 of the semiconductor chip is 20-70 of that of a cathode end P2 area 3; and the P1 anode area 1 is internally provided with a P+ high-concentration area 8. When being applied to the series inversion, the asymmetrical fast thyristor can obviously reduce the on-state pressure drop to improve the on-state capability and the work reliability, has the characteristics of being capable of preferably optimizing the inner structure, reducing the large-injection stored electric charge, and improving the resumed softness, and can be applied to a large-power series inverted power supply device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices. It specifically relates to a semiconductor converter device, which is mainly used in a high-power series inverter power supply device. Background technique [0002] At present, the vast majority of induction heating power supplies use parallel inverter technology, and the semiconductor devices used are fast thyristors. Typical circuits are as follows: figure 1 shown. The input three-phase alternating current is rectified and then output as direct current through the reactor. The inverter bridge composed of four fast thyristors receives the trigger signal from the control unit, converts the direct current, and outputs high-frequency single-phase alternating current. And a more efficient, stable and larger output capacity solution is the series inverter technology, a typical circuit such as figure 2 shown. Different from the parallel inverter technology, the inverter bridge...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/74H01L29/06H01L29/36
Inventor 颜家圣吴拥军张桥杨成标刘小俐刘鹏肖彦
Owner HUBEI TECH SEMICON
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