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A Potential Controlled Fast Transverse Insulated Gate Bipolar Transistor

A bipolar transistor, insulated gate technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems such as the difficulty of further optimization of the off-time and on-voltage drop constraints, and the problem of working reliability, so as to suppress NDR. phenomenon, improve work stability, optimize the effect of trade-off relationship

Active Publication Date: 2021-02-09
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In the existing LIGBT structure of the anode extraction channel, through a certain anode structure design, although the turn-off speed has been improved, there are still operational reliability problems caused by the NDR phenomenon, or additional drive requirements, or turn-off time and turn-on Problems that are difficult to further optimize the constraint relationship between pressure drops, etc.

Method used

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  • A Potential Controlled Fast Transverse Insulated Gate Bipolar Transistor
  • A Potential Controlled Fast Transverse Insulated Gate Bipolar Transistor
  • A Potential Controlled Fast Transverse Insulated Gate Bipolar Transistor

Examples

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Embodiment 1

[0042] Such as Figure 4 As shown, a potential-controlled fast lateral insulated gate bipolar transistor includes an SOI substrate, a drift region, an anode region, a cathode region and a gate region, and is characterized in that: the SOI substrate includes a buried oxide layer 5, a lining Bottom 6 and top silicon layer.

[0043] The buried oxide layer 5 covers the substrate layer 6 .

[0044] The top silicon layer is located on the buried oxide layer 5 .

[0045] A conductive functional region of a potential controlled fast lateral insulated gate bipolar transistor is formed in the top silicon layer.

[0046] The drift region is attached above the buried oxide layer 5 , and the drift region is composed of an N-base region 9 .

[0047] The anode region and the cathode region are respectively located on two sides of the N base region 9 .

[0048] The gate area is attached above the cathode area.

[0049] The substrate layer 6 is made of P-type or N-type silicon material, a...

Embodiment 2

[0067] A potential-controlled fast lateral insulated gate bipolar transistor, comprising an SOI substrate, a drift region, an anode region, a cathode region and a gate region, characterized in that the SOI substrate includes a buried oxide layer 5, a substrate layer 6 and top silicon layer.

[0068] The buried oxide layer 5 covers the substrate layer 6 .

[0069] The top silicon layer is located on the buried oxide layer 5 .

[0070] A conductive functional region of a potential controlled fast lateral insulated gate bipolar transistor is formed in the top silicon layer.

[0071] The drift region is attached above the buried oxide layer 5 , and the drift region is composed of an N-base region 9 .

[0072] The anode region and the cathode region are respectively located on two sides of the N base region 9 .

[0073] The gate area is attached above the cathode area.

[0074] The substrate layer 6 is made of P-type or N-type silicon material, and its typical impurity concentr...

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Abstract

The invention discloses a potential-controlled fast lateral insulated gate bipolar transistor, which includes an SOI substrate, a drift region, an anode region, a cathode region and a gate region, and is characterized in that the SOI substrate includes a buried oxide layer, a liner bottom and top silicon layers. The buried oxide layer covers the substrate layer. The top silicon layer is located on the buried oxide layer. A conductive functional region of a potential controlled fast lateral insulated gate bipolar transistor is formed in the top silicon layer. The drift region is attached above the buried oxide layer, and the drift region is composed of an N-base region. The anode region and the cathode region are respectively located on two sides of the N base region. The gate area is attached above the cathode area.

Description

technical field [0001] The invention relates to a conductance modulation high-voltage power device in the technical field of semiconductor power electronic devices, in particular to a potential-controlled fast lateral insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT: Insulated Gate Bipolar Transistor) is a mainstream component in modern power electronic equipment. The main features of IGBT structure and work are MOS gate control and conductance modulation bipolar carrier conduction mode, so it has the advantages of simple driving and large current conduction capacity. [0003] The IGBT made of SOI (Silicon On Insulator) as the substrate material is usually a lateral structure, referred to as SOI-based LIGBT, especially the thin silicon SOI-based LIGBT, which is a key component of SOI high-voltage integrated circuits. Advantages of integrating with other functional devices. While the conductance modulation effect great...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/739
CPCH01L29/0684H01L29/7394
Inventor 陈文锁廖瑞金李晓玲蒋玉宇
Owner CHONGQING UNIV
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