Unlock instant, AI-driven research and patent intelligence for your innovation.

An Insulated Gate Bipolar Transistor

A technology of bipolar transistors and transistors, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the conduction voltage drop and the withstand voltage of insulated gate bipolar transistors, so as to reduce the conduction voltage drop and improve various The effect of the item parameter capability

Active Publication Date: 2020-06-16
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present application provides an insulated gate bipolar transistor, which solves the technical problem in the prior art that the withstand voltage of the insulated gate bipolar transistor is reduced after the technical concentration of the carrier storage layer of the insulated gate bipolar transistor is increased, and achieves In order to greatly reduce the conduction voltage drop while maintaining the original withstand voltage capability, so as to comprehensively improve the technical effect of various parameter capabilities of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An Insulated Gate Bipolar Transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] An insulated gate bipolar transistor provided in the embodiment of the present application, the insulated gate bipolar transistor (Insulate-GateBipolar Transistor-IGBT) referred to as IGBT, combines the functions of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET) Advantages, with good characteristics, a wide range of applications; IGBT is also a three-terminal device: gate, collector and emitter. IGBT is a bipolar device with MOS structure, which belongs to the power device with high-speed performance of power MOSFET and low resistance performance of bipolar. The application range of IGBT is generally in the area with a withstand voltage of 600V or more, a current of 10A or more, and a frequency of 1kHz or more. It is mostly used in industrial motors, civilian small-capacity motors, converters (inverters), camera strobes, induction heating (Induction Heating) rice cookers and other fields. Such as figure 1 shown, the transi...

Embodiment 2

[0035] In order to describe an IGBT more clearly, the embodiment of the present application also provides a working principle of the IGBT, and the working principle of the IGBT will be described in detail below.

[0036] When the insulated gate bipolar transistor described in this application is in the conduction state, since the gate of the non-circular cell region is locally narrowed and designed to connect the N+ emitter 1 to the metal ground, the P injection layer 5 can realize a ground bias connection structure, At this time, due to the effect of the ground potential, the two adjacent P injection layers 5 in the device circular cell structure can easily achieve mutual depletion at a relatively low concentration, forming a shielding structure effect, so at this time the transistor design can select the polarity The high-concentration N-type carrier storage layer 4 is designed, and the selected concentration can be higher than the concentration of the N-type storage layer se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an insulated gate bipolar transistor, and relates to the field of semiconductor devices. The insulated gate bipolar transistor comprises an N+ emitting electrode, a Pwell region, an N drift region, a carrier storage layer, a P injection layer and a region without circular cells, wherein the Pwell region is internally provided with a first groove gate and a second groove gate; the region without circular cells is internally provided with a local grid electrode narrowing bias structure, wherein the local grid electrode narrowing bias structure comprises a first grid electrode and a second grid electrode, a first transverse broadening structure is formed at the bottom of the first grid electrode, and the broadening direction faces the second grid electrode; a second transverse broadening structure is formed at the bottom of the second grid electrode, and the broadening structure faces the first grid electrode. The insulated gate bipolar transistor solves the technical problem that the withstand voltage of the insulated gate bipolar transistor is reduced caused after the technical concentration of the carrier storage layer of the insulated gate bipolar transistorin the prior art is increased, and original withstand voltage capacity can be maintained while the drop voltage is greatly reduced, so that the technical effect of comprehensively improving the parameter capacities of the device is reached.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an insulated gate bipolar transistor. Background technique [0002] Insulated gate bipolar transistor is one of the core power semiconductor devices in the field of high voltage and high current. In order to continuously improve the device characteristics and achieve the best parameter performance of the device, reducing the on-state saturation voltage drop of the device is one of the most important optimization efforts. [0003] However, in the process of realizing the technical solution of the invention in the embodiment of the present application, the inventor of the present application found that the above-mentioned technology has at least the following technical problems: [0004] The increase in technical concentration of the carrier storage layer of the insulated gate bipolar transistor in the prior art leads to a decrease in the withstand voltage of the insulated gat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/423H01L29/739
CPCH01L29/0623H01L29/42312H01L29/7397H01L29/7398
Inventor 陆江刘海南蔡小五卜建辉罗家俊
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI