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Groove-type IGBT and preparation method thereof

A trench-type, trench-gate technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low breakdown voltage capability, increase limitations, reduce on-state voltage drop, etc., and achieve enhanced Voltage withstand capability, improving electric field distribution, reducing the effect of electric field concentration

Inactive Publication Date: 2018-06-08
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, compared with the planar IGBT, the trench IGBT can greatly reduce the on-state voltage drop, so as to achieve a better compromise between the on-state voltage drop and the turn-off energy, but it also has a lower breakdown withstand voltage capability. disadvantages, increasing the limitations of its application in the field of high-voltage power transmission

Method used

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  • Groove-type IGBT and preparation method thereof
  • Groove-type IGBT and preparation method thereof
  • Groove-type IGBT and preparation method thereof

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Embodiment Construction

[0050] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0051] The preparation method of a trench type IGBT provided by the embodiment of the present invention will be described below.

[0052] In this embodiment, the trench type IGBT can be prepared according to the following steps, specifically:

[0053] Step S101: Implanting P-type ions into the N-drift region corresponding to ...

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Abstract

The invention provides a groove-type IGBT and a preparation method thereof. The preparation method comprises the following steps: injecting P-type ions into an N-drift region right under a groove gatestructure in an N-type substrate to form a floating P region; and depositing a metal layer on the front surface and back surface of the N-type substrate to form an emitter electrode and a collector electrode respectively. The groove-type IGBT is prepared through the preparation method above. Compared with the prior art, according to the groove-type IGBT and the preparation method thereof, holes in the floating P region can recombine a part of electrons of the groove-type IGBT in the conduction process, thereby reducing saturation current of the groove-type IGBT, improving short circuit characteristic of the groove-type IGBT, improving electric field distribution under a groove, reducing concentration of an electric field under the groove and enhancing voltage endurance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a trench type IGBT and a preparation method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) not only has the advantages of unipolar devices and bipolar devices, but also has the advantages of simple drive circuit, low power consumption / cost of control circuit, low saturation voltage and low loss of the device itself Etc. Currently, insulated gate bipolar transistors mainly include a planar IGBT formed by using a planar gate and a trench IGBT formed by oxidation on a deep trench wall. Among them, compared with the planar IGBT, the trench IGBT can greatly reduce the on-state voltage drop, so as to achieve a better compromise between the on-state voltage drop and the turn-off energy, but it also has a lower breakdown withstand voltage capability. The disadvantages have increased the limitations of its application in the field of high-voltage ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L21/265H01L29/739H01L29/06
CPCH01L21/265H01L29/0607H01L29/0684H01L29/66348H01L29/7397
Inventor 朱涛潘艳温家良金锐崔磊徐哲和峰赵哿王耀华刘江
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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