High-speed high-voltage level conversion circuit applied to GaN gate drive

Abstract

The invention discloses a high-speed high-voltage level conversion circuit applied to a GaN gate drive. The high-speed high-voltage level conversion circuit comprises an input circuit, a first PMOS (P-channel Metal Oxide Semiconductor) transistor, a level conversion circuit and a shaping circuit, wherein a first end of the input circuit is connected to a first end of the level conversion circuit at a first node; a second end of the input circuit is connected to a drain electrode of the first PMOS transistor at a second node; a gate electrode of the first PMOS transistor is connected to a firstpower line; a source electrode of the first PMOS transistor is connected to a second end of the level conversion circuit at a third node; the level conversion circuit is connected to a second power line; a second end of the level conversion circuit is connected to an input end of the shaping circuit at the third node; the shaping circuit is connected to the first power line and the second power line; an output end of the shaping circuit is connected to a first end of a power device at a fourth node; and the power device is connected to the first power line and the third power line.

Description

technical field [0001] The invention belongs to the field of integrated circuit design, and more specifically relates to a high-speed high-voltage level conversion circuit applied to GaN gate driving. Background technique [0002] Traditional power electronic power devices based on silicon materials have gradually approached their theoretical limits, and it is difficult to meet the development needs of high frequency and high power density of power electronic technology. Compared with traditional Si devices, GaN devices show their advantages in on-resistance and gate charge, which can enable power converters to achieve smaller volume, higher frequency and higher efficiency, so that they can be used in automotive, communication, industrial It has broad application prospects in other fields. The increase of switching frequency can not only effectively reduce the size of capacitors, inductors and transformers in the system circuit, but also suppress interference, reduce ripple...

AI Technical Summary

Problems solved by technology

However, there will be unnecessary current consumption to ground after the level shift is complete, for example when V IN When the high level is maintained, the left-to-ground branch will continue to conduct, and will continue to consume I d The ground current, resulting in a large current consumption

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