Array substrate and preparation method thereof
An array substrate and film layer technology, applied in the field of array substrate and its preparation, can solve problems such as low stripping efficiency, affecting panel quality, and photoresist residue, so as to improve stripping efficiency and stripping uniformity, reduce the probability of residue, good peeling effect
Active Publication Date: 2018-06-19
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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[0003] The 3Mask process is based on the 4Mask process, using the Half-Tone mask, combined with the ITO lift-off process, after the PV layer is dug, the ITO film is formed without removing the photoresist, and the photoresist is removed after the film is formed. The process of removing the photoresist completes the patterning of the pixel electrode layer at the same time, and the difficulty of the ITO Lift-off process is that the photoresist is covered with ITO, and the stripper can only peel off the photoresist from the area not covered by ITO. When the area not covered by ITO is small, there are problems such as low stripping efficiency and photoresist residue, which affect the quality of the panel
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[0025] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses. In the drawings, the same reference numerals will be used to denote the same elements throughout.
[0026] refer to figure 1 The array substrate provided in this embodiment includes a thin film transistor layer 1 , a passivation layer 2 and a pixel electrode layer 3 , the passivation layer 2 is located on the thin film transistor layer 1 , and the pixel electrode layer 3 is formed on the surface of the passivation layer 2 . T...
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The invention provides an array substrate and a preparation method thereof. The preparation method comprises the steps of: depositing a passivation material layer on a thin film transistor layer, wherein the passivation material layer comprises alternate first film layers and second film layers, the top layer of the passivation material layer is the second film layer, and the first film layer andthe second film layer are different in material; etching the passivation material layer by using a photoresist layer as a mask until the first film layer is exposed to form a pattern structure corresponding to the photoresist layer; depositing an ITO film on the photoresist layer and the exposed first film layer; removing the photoresist layer to obtain the array substrate. Due to the different etching rates of different materials, a large gap can be formed between the edge of a spacer and the edge of the photoresist, so that the stripping liquid can better peel off the photoresist, thereby improving the peeling efficiency and peeling uniformity, and reducing the probability of leaving the photoresist.
Description
technical field [0001] The present invention relates to the technical field of array substrate preparation, in particular to an array substrate and a preparation method thereof. Background technique [0002] TFT-LCD liquid crystal display is currently the most widely used flat-panel display, and the technology for manufacturing liquid crystal panels is becoming more and more mature and advanced. Simplifying the production process, reducing process time, and improving process efficiency are important ways to reduce production costs and survive in the fierce competition in the industry. Therefore, the technology of preparing TFT-LCD array substrate structure by 3Mask process has been extensively studied. [0003] The 3Mask process is based on the 4Mask process, using the Half-Tone mask, combined with the ITO lift-off process, after the PV layer is dug, the ITO film is formed without removing the photoresist, and the photoresist is removed after the film is formed. The proces...
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IPC IPC(8): H01L21/77H01L27/12G02F1/1362
CPCG02F1/136209G02F1/136227H01L27/1248H01L27/1259
Inventor 欧甜徐洪远
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD