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Method for forming target assembly

A target and component technology, applied in the direction of electron beam welding equipment, metal processing equipment, welding equipment, etc., can solve the problems that the performance of target components needs to be improved, and achieve the effect of reducing welding defects and improving bonding strength

Active Publication Date: 2019-09-06
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the performance of target components in the prior art needs to be improved

Method used

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  • Method for forming target assembly
  • Method for forming target assembly
  • Method for forming target assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] As mentioned in the background, the performance of target assemblies in the prior art is poor.

[0031] figure 1 It is a structural schematic diagram of a target assembly, and the target assembly includes: a target 100 having a core area and an edge area around the core area; a back plate 110 having an opposite first The end face and the second end face, the first end face and the edge area of ​​the target 100 are fixed; the base 130, the second end face of the back plate 110 is fixed by the back plate support 120 and the base 130, the base 130 1. There is a cavity between the target 100 and the back plate 110, and the cavity is used for accommodating cooling liquid.

[0032] However, the bonding strength between the back plate 110 and the target 100 in the above-mentioned target assembly is low, and it is found through research that the reasons are:

[0033]During the sputtering process, the target material 100 is in contact with the cooling liquid, and the cooling l...

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PUM

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Abstract

The invention provides a forming method of a target material assembly. The forming method comprises the following steps that target material, a back plate and a middle layer are provided, and the middle layer is provided with a first end face and a second end face which are opposite to each other; the target material and the first end surface of the middle layer are welded through a first electronbeam welding process, and the mobility of the materials of the middle layer in the first electron beam welding process is higher than that of the target material in the first electron beam welding process; and a second electron beam welding process is adopted to weld the back plate and the second end surface of the middle layer, and the mobility of the material of the middle layer in the second electron beam welding process is higher than that of the material of the back plate in the second electron beam welding process. The forming method of the target material component enables the bondingstrength of the target material and the back plate to be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a target assembly. Background technique [0002] The target assembly includes a target and a back plate combined with the target and having a certain bonding strength. [0003] A target component is a cylindrical structure, the edge area of ​​the back plate and the target is fixed, and the side of the back plate opposite to the target is fixed to the base, and the back plate plays a supporting role; the back plate , There is a cavity between the base and the target. [0004] In the magnetron sputtering coating process, the target component is in a high-voltage electric field and a magnetic field with a strong magnetic field. The target is sputtered under the action of high-energy ion bombardment, and the neutral atoms or molecules sputtered from the target deposited on a substrate to form a thin film. During the entire sputtering process, the tar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K15/00
Inventor 姚力军潘杰相原俊夫王学泽廖培君
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD