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Semiconductor processing sheet

A technology for semiconductors and wafers, which is applied in semiconductor/solid-state device manufacturing, film/sheet release liners, film/sheet adhesives, etc. It can solve problems such as wafer breakage, and achieve not easy adhesion and excellent The effect of light transmission

Active Publication Date: 2018-07-03
LINTEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thinned wafers used in recent years have a high risk of wafer breakage during handling

Method used

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  • Semiconductor processing sheet
  • Semiconductor processing sheet
  • Semiconductor processing sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0198] (1) Manufacture of base material

[0199] A polyvinyl chloride film was produced as a base material by a calendering film method. The arithmetic mean roughness Ra of the first surface of the polyvinyl chloride film is 0.03 μm, and the tensile elastic modulus (Young's modulus) in the MD direction at 23° C. measured in accordance with JIS K7161:1994 is 250 MPa, and the thickness is 80 μm.

[0200] In addition, the arithmetic mean roughness Ra in this example is obtained by measuring 10 points in the plane according to JIS B061:2013 using a touch-type surface roughness meter ("SURFTEST SV-3000" manufactured by Mitsutoyo Corporation) and calculating the average value. value.

[0201] In addition, with respect to the above substrate alone, the transmittance of laser light for printing (wavelength: 532nm), the transmittance of laser light for stealth dicing (wavelength: 1600nm), and the transmittance of infrared light for inspection (wavelength: 1069nm) were evaluated. , a...

Embodiment 2

[0210] (1) Manufacture of base material

[0211] An ethylene-methacrylic acid copolymer film was produced as a substrate by a T-die film forming method. The arithmetic mean roughness Ra of the first surface of the ethylene-methacrylic acid copolymer film is 0.05 μm, and the tensile modulus of elasticity (Young's modulus) in the MD direction at 23° C. measured in accordance with JIS K7161:1994 It is 130MPa and the thickness is 80μm.

[0212] In addition, with regard to the above substrate alone, the transmittance of laser light for printing (wavelength: 532nm), the transmittance of laser light for stealth dicing (wavelength: 1600nm), and the transmittance of infrared light for inspection (wavelength: 1069nm) were evaluated. , all show excellent transmittance.

[0213] (2) Preparation of Adhesive Composition (II)

[0214] 99 parts by mass of butyl acrylate and 1 part by mass of acrylic acid were copolymerized to obtain an acrylic copolymer having a weight average molecular we...

Embodiment 3

[0219] (1) Manufacture of base material

[0220] An ethylene-vinyl acetate copolymer film was produced as a base material by a T-die film forming method. The arithmetic mean roughness Ra of the first surface of the ethylene-vinyl acetate copolymer film is 0.06 μm, and the tensile modulus of elasticity (Young's modulus) in the MD direction at 23° C. measured in accordance with JIS K7161:1994 It is 75MPa and the thickness is 100μm.

[0221] In addition, with respect to the above substrate alone, the transmittance of laser light for printing (wavelength: 532nm), the transmittance of laser light for stealth dicing (wavelength: 1600nm), and the transmittance of infrared light for inspection (wavelength: 1069nm) were evaluated. , all show excellent transmittance.

[0222] (2) Preparation of Adhesive Composition (III)

[0223] An acrylic copolymer having a weight average molecular weight of 420,000 was obtained by copolymerizing 40 parts by mass of 2-ethylhexyl acrylate, 40 parts ...

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Abstract

The invention provides a semiconductor processing sheet 1 which comprises at least: a substrate 10 including a first surface 101 and a second surface 102; a semiconductor bonding layer 80 including afirst surface 801 and a second surface 802; and a peeling film 30 including a first surface 301 and a second surface 302. In the semiconductor processing sheet 1: the arithmetic mean roughness Ra of the first surface 101 is from 0.01 to 0.8 [mu]m; the arithmetic mean roughness Ra of the second surface 302 is greater than 0.05 [mu]m to 0.8 [mu]m or less; and the peeling force [beta] at the interface between the second surface 802 and the first surface 301 after bonding the second surface 802 and the first surface 301 and storing the same at 40 DEG C for three days is from 10 to 1000 mN / 50 mm. This semiconductor processing sheet 1 has excellent light transmissibility, and blocking is less likely to occur.

Description

technical field [0001] The present invention relates to a wafer for semiconductor processing. Background technique [0002] When manufacturing a semiconductor wafer from a semiconductor wafer, a semiconductor processing sheet such as a dicing sheet or a back grinding sheet is generally used. In recent years, such sheets for semiconductor processing have been required to have transmittance to light of a desired wavelength (hereinafter sometimes referred to as "light transmittance"). [0003] For example, in recent years, the use of thinner silicon wafers or glass wafers has been increasing. When these wafers are diced using a blade, wafer defects such as chipping, wafer cracking, etc. are prone to occur. Therefore, when these wafers are used, after dicing, the shape of the wafer is inspected across the semiconductor processing sheet from the surface of the wafer in contact with the semiconductor processing sheet with the wafer attached to the semiconductor processing sheet....

Claims

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Application Information

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IPC IPC(8): C09J7/20B32B27/00H01L21/304
CPCB32B27/00H01L21/304C09J7/20C09J7/40C09J201/00H01L21/67132H01L21/6836H01L21/78C09J2203/326C09J2301/312
Inventor 佐藤明德中村优智山下茂之
Owner LINTEC CORP
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