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Ultraviolet light emitting diode and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as warping of ultraviolet light-emitting diodes, and achieve the improvement of light-emitting wavelength uniformity, improvement of surface temperature uniformity, and reduction of warpage. Effect

Pending Publication Date: 2018-07-10
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an ultraviolet light-emitting diode and its manufacturing method, which is used to solve the problem that the ultraviolet light-emitting diode is prone to warping in the prior art

Method used

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  • Ultraviolet light emitting diode and manufacturing method thereof
  • Ultraviolet light emitting diode and manufacturing method thereof
  • Ultraviolet light emitting diode and manufacturing method thereof

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Embodiment 1

[0051] like Figure 5 ~ Figure 11 As shown, the present embodiment provides a method for manufacturing an ultraviolet light-emitting diode, comprising steps:

[0052] like Figure 5 ~ Figure 7As shown, step 1) S11 is firstly performed to provide a substrate 201, and a buffer layer 202 and an n-type layer 203 are formed on the substrate 201, and the buffer layer 202 and the n-type layer 203 have warpage.

[0053] In this embodiment, the substrate 201 is a sapphire substrate, and the sapphire substrate can be a flat sapphire substrate or a patterned sapphire substrate. Of course, other types of substrates can also be selected according to different requirements. Such as Si substrate, SiC substrate, GaN substrate, etc., and are not limited to the examples listed here.

[0054] In the MOCVD epitaxial equipment, the chemical vapor deposition process is used to deposit the buffer layer 202 on the substrate 201. The material of the buffer layer 202 can be AlN, etc. At this time, th...

Embodiment 2

[0083] This embodiment provides an ultraviolet light emitting diode, the basic structure of which is the same as that of embodiment 1, wherein the difference from embodiment 1 is that the stress modulation layer 204 is located in the n-type layer 203 .

Embodiment 3

[0085] This embodiment provides an ultraviolet light emitting diode, the basic structure of which is the same as that of embodiment 1, wherein the difference from embodiment 1 is that the stress modulation layer 204 is located in the quantum well light emitting layer 205 .

[0086] As mentioned above, the ultraviolet light-emitting diode and its manufacturing method of the present invention have the following beneficial effects:

[0087] The present invention is aimed at ultraviolet light-emitting diodes, especially deep ultraviolet light-emitting diodes, introducing Al between the n-type layer 203 of the epitaxial structure and the quantum well light-emitting layer 205 x Ga y In 1-x-y In the N stress modulation layer 204, the Al component is adjusted to more than 70%, which can reduce the warping of the subsequent growth of the quantum well light-emitting layer, and at the same time improve the surface temperature uniformity of the quantum well light-emitting layer, thereby ...

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Abstract

The present invention provides an ultraviolet light emitting diode and a manufacturing method thereof. The ultraviolet light emitting diode comprises: a buffer layer; an n-type layer located on the buffer layer; a stress modulation layer located on the n-type layer; a quantum well luminescent layer located on the stress modulation layer; and a p-type layer located on the quantum well luminescent layer. The stress modulation layer is formed by materials with lattice constants smaller than the n-type layer, the quantum well luminescent layer and the p-type layer and is configured to modulate thewarping of an epitaxial structure of the ultraviolet light emitting diode. An AlxGayIn1-x-yN stress modulation layer is introduced between the n-type layer and the quantum well luminescent layer of the epitaxial structure to regulate a component A1 up to over 70% so as to reduce the warping when a quantum well luminescent layer is subsequently grown, improve the surface temperature uniformity ofthe quantum well luminescent layer and improve the luminous wavelength uniformity of the epitaxial structure.

Description

technical field [0001] The invention belongs to the field of design and manufacture of semiconductor lighting devices, in particular to an ultraviolet light emitting diode and a manufacturing method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component capable of emitting light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. And the use is also used as indicator lights, display panels, etc. from the beginning; with the continuous advancement of technology, light-emitting diodes have been widely used in displays, TV lighting decoration and lighting. [0003] UV Light Emitting Diode (UV-LED) is...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/06
CPCH01L33/06H01L33/48H01L33/32H01L33/12H01L33/007H01L33/0025H01L33/0075
Inventor 卓昌正陈圣昌邓和清
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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