Epitaxial wafer of green light emitting diode and preparation method thereof

Abstract

The invention provides an epitaxial wafer of a green light emitting diode and a preparation method thereof, the epitaxial wafer of the green light emitting diode comprises a multi-quantum well layer and further comprises a multi-quantum well preparation layer, the multi-quantum well layer grows on the multi-quantum well preparation layer, the multi-quantum well preparation layer comprises an AlGaN layer, an InAlGaN layer, an InGaN layer and an InN layer which sequentially grow in an epitaxial mode, and the AlGaN layer, the InAlGaN layer, the InGaN layer and the InN layer are arranged on the multi-quantum well preparation layer. The multi-quantum well layer is grown on the InN layer. According to the invention, the multi-quantum well preparation layer with a special structural design is grown before the multi-quantum well, so that the defects in the quantum well are successfully reduced, the bottom layer is more matched with the crystal lattice of the quantum well, the stress of the green light multi-quantum well layer is released, an In-rich environment is provided, the incorporation of the green light In component is increased, and the light emitting efficiency is improved. And the polarization effect in the quantum well is reduced, so that the In clustering phenomenon is reduced, the In component distribution is more uniform, the light-emitting area is more uniform, and finally, the light-emitting wavelength uniformity is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an epitaxial wafer of a green light-emitting diode and a preparation method thereof. Background technique [0002] As is known to all, light-emitting diodes (Light Emitting Diode, LED for short) have been widely used in solid-state lighting and display fields due to their advantages of high efficiency, energy saving, and environmental protection. Among them, multiple quantum wells are the core structure of LED light-emitting, and the defects of multiple quantum wells will directly affect the quality of LED light-emitting, so multiple quantum wells have always been one of the main research objects in the industry. [0003] At present, there are certain defects such as strong polarization electric field and high dislocation density in the multiple quantum wells. Especially for such high In composition GaN-based LEDs as green LEDs, not only the quantum wells are subjec...

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Problems solved by technology

[0003] At present, there are certain defects such as strong polarization electric field and high dislocation density inside the multiple quantum wells, especially for GaN-based LEDs with high In composition such as green LEDs, not only the quantum wells are subject to a larger polarization electric field , and there are more defects, which lead to In clusters inside the multiple quantum wells, the distribution of In components is uneven, and the light-emitting area is not concentrated, resulting in poor wavelength uniformity of green light, which seriously affects the yield

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