A method for wet process of thin film transistor array substrate

Abstract

The invention provides a method for a wet process of a thin film transistor array substrate. The method comprises the step of placing a substrate in a processing room so that a metal layer and a blocking layer both are in contact with a medium liquid in the processing room for wet processing, wherein the metal layer and the blocking layer are formed on the substrate, the blocking layer is arrangedon the metal layer, a metal piece of which electrochemical activity is larger than that of the metal layer and which is not in chemical reaction with the medium liquid is arranged in the processing room, and the metal layer does not generate electrochemical reaction with the medium liquid. By the method, an electrochemical corrosion phenomenon occurring in the fabrication process of the thin filmtransistor array substrate can be prevented, and the quality of the thin film transistor array substrate is improved.

Description

technical field [0001] The invention belongs to the field of display technology, and more specifically, relates to a wet process method for a thin film transistor array substrate. Background technique [0002] TFT-LCD (Thin Film Transistor Liquid Crystal Display) is widely used in industries such as computers, video terminals, communications and instrumentation due to its low power consumption and fast response speed. For example, it is mainly used in notebook computers, desktop computer monitors, Industrial monitors, global satellite positioning systems (GPS), personal digital assistants (PDAs), game consoles, videophones, portable VCDs, DVDs and other portable devices. After continuous development and innovation, TFT-LCD has rapidly grown into a mainstream display. [0003] With people's pursuit of large size, high resolution LCD and low cost, it is imperative to invest in large size glass equipment. In order to overcome the problems of large-size glass wiring and RC del...

AI Technical Summary

Problems solved by technology

[0004] However, due to the characteristics of easy diffusion and poor adhesion of metallic Cu, a barrier layer is generally used in the Cu process to prevent Cu from diffusing and increase its adhesion.

In the process of wet etching, due to the difference in activity between Cu and the metal (such as Mo) of the barrier layer, electrochemical reactions are prone to occur, resulting in an increase in the etching rate of Cu, which in turn leads to the phenomenon that the underlying Cu is hollowed out.

As a result, it will adversely affect the performance and reliability of TFT devices

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