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Semiconductor component with first temperature measuring element and method for determining a current flowing through the semiconductor component

A temperature measurement and semiconductor technology, applied in the field of vehicle control devices, to achieve the effect of reducing consumption, cost saving, and reducing effective cost

Active Publication Date: 2021-04-13
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, with shunt or magnetic sensors, additional components are required, which likewise leads to cost

Method used

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  • Semiconductor component with first temperature measuring element and method for determining a current flowing through the semiconductor component
  • Semiconductor component with first temperature measuring element and method for determining a current flowing through the semiconductor component
  • Semiconductor component with first temperature measuring element and method for determining a current flowing through the semiconductor component

Examples

Experimental program
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Embodiment Construction

[0039] first in figure 1 A possibility according to the prior art for ascertaining the current flowing through a semiconductor component 10 in the form of a current sensor with divided cells is shown in . A main FET (Field Effect Transistor) 2 is shown in the right part of the figure. The main FET is connected as usual with a source contact 3 , a drain contact 4 and a gate contact 5 . Measuring FET 6 is shown in the left region of the figure. The measuring FET is connected in parallel with the main FET 1 and consists of some divided cells, but otherwise identical to those of the main FET 1 . The separated cells are used as current mirrors. The current I can be read at the current measuring point 8 with the aid of an external resistor 7 Sense , which allows a direct deduction of the current flowing through main FET 1. However, resistor 7 can limit the dynamics and accuracy of the current measurement. Furthermore, in solutions known from the prior art, temperature sensors ...

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PUM

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Abstract

A semiconductor component (10) is described which has a substrate and at least two temperature measuring elements (20, 22). The two temperature measuring elements (20, 22) are arranged at different positions within the semiconductor component (10) on the bare wafer (11) of the semiconductor component (10). In particular, the temperature measuring element (20) can be arranged in the active region (14) of the semiconductor component (10) and the temperature measuring element (22) can be arranged in the passive region ( 16) in. The temperature measuring elements (20, 22) measure two different temperatures T J , T sense , the current IDS flowing through the semiconductor component ( 10 ) can then be calculated using the two different temperatures. The semiconductor component can be a power MOSFET (18). Furthermore, a method is described for determining a current IDS flowing through a semiconductor component (10), in which two temperatures measured at different locations of the semiconductor component (10) are used. The described semiconductor component ( 10 ) and the described method are suitable, for example, for use in a control device for a vehicle.

Description

technical field [0001] The invention relates to a semiconductor component, preferably a power MOSFET element, as well as a method for producing the semiconductor component and a control device for a vehicle. Background technique [0002] Requirements for modern semiconductor switches such as power MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistor) and IGBTs (insulated-gate bipolar Transistor) In addition to very low conduction and switching losses and a high blocking capability, more and more monolithically integrated functions are included which enable the reliable detection of overloads such as ESD - Impulse (electrostatic discharge, English: Electrostatic Discharge), overheating temperature, breakdown or overcurrent. In power electronics systems, for example for motor control, the phase currents for regulating the system are of decisive importance. Excessively high currents during the switching process can lead to breakdowns and possibly destruction of the comp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K7/01B62D5/04
CPCG01K7/01H03K17/74
Inventor J·朱斯W·冯埃姆登
Owner ROBERT BOSCH GMBH
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