Slope control circuit for erasing and writing voltage of non-volatile memory and non-volatile memory

Abstract

The invention discloses a slope control circuit of erase voltage of a nonvolatile memory and the nonvolatile memory, wherein the slope control circuit comprises a charge pump, a charge pump clock control unit and a detection unit; the charge pump is used for generating target voltage; the detection unit is used for producing the target voltage into detection voltage according to received pulse clock signals; and the charge pump clock control unit is used for comparing the detection voltage with reference voltage and outputs the received charge pump clock signals to a clock input end of the charge pump according to comparison results. The slope control circuit can control the rising slope of voltage by adjusting detection capacitance, reference voltage or the cycle of pulse clock signals, and the output of the charge pump does not have direct-current power consumption and has high efficiency.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a slope control circuit for rewriting voltage of a nonvolatile memory and a nonvolatile memory. Background technique [0002] In the existing NVM (Non-volatile Memory, non-volatile memory) structure, whether it is EEPROM (electrically erasable programmable read-write memory) or FLASH (flash memory), the storage unit is based on FOLTOX (Floating-gateTunnel Oxide, floating gate) structure, such as figure 1 As shown, the gate G, the drain D and the source S use FN (Flowler Nordheim) tunneling to charge and discharge the floating gate. During the process of cyclic erasing, the carriers pass through SiO2 (silicon dioxide) When the SiO2 layer enters the floating gate, the SiO2 layer will degrade and cause the NVM memory cell to eventually fail. The physical reason is that when electrons pass through SiO2, there is a certain probability of colliding with the internal lattice of SiO...

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the defect that the erasing and writing voltage of the storage unit in the prior art is not slope controlled, and the erasing and writing voltage is likely to cause damage to the SiO2 layer of the floating gate and cause the failure of the storage unit, and to provide a non-volatile Slope Control Circuit of Memory Erasing and Writing Voltage and Non-Volatile Memory

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