46results about How to "No DC power consumption" patented technology

The invention discloses a capacitive temperature, humidity and air pressure sensor integrated manufacturing method based on SOI chip device layer silicon anodic bonding. According to the integrated manufacturing method, a step-by-step deep silicon etching technology, SOI chip device layer silicon and a glass anodic bonding technology are combined for use so that a thin film structure, a flat large capacitance structure with a tiny electrode gap and a sealed cavity structure needed by an integrated sensor can be manufactured at the same time. The capacitive temperature, humidity and air pressure sensor integrated manufacturing method is characterized in that plenary capacitance sensitive temperature, humidity and air pressure sensors are manufactured in an integrated mode, namely a low power consumption integrated multi-sensor structure is manufactured. The capacitive temperature, humidity and air pressure sensor integrated manufacturing method can be used for realizing on-chip integration of the temperature, humidity and air pressure sensors, therefore, the area of the sensor integrated structure is greatly reduced, the length of an interconnection line is reduced, and the system reliability is improved.

The invention discloses a reconfigurable dual-band mixer. The mixer comprises a load and buffer stage circuit, a switch stage circuit, a local oscillator input end matching network, an interstage matching circuit, a transconductance stage circuit and a switch frequency selection matching network circuit. The reconfigurable dual-band mixer can be switched between two different frequency bands, thetransconductance stage adopts two paths of parallel to work at different frequencies respectively, and the transconductance stage works at different frequency bands through switch switching and a biascontrol circuit; The radio frequency input matching network combines the series connection of the matching circuits with different frequency bands and the switch frequency selection network, therebyensuring that the circuit can achieve the optimal performance when working in different frequency bands.

The invention relates to a direct heating type millimeter wave signal detector based on a silicon-based micromechanical cantilever beam T-shaped junction. The direct heating type millimeter wave signal detector is composed of a cantilever beam coupling structure, a T-shaped junction, a direct heating type microwave power sensor and a switch. The cantilever beam coupling structure comprises two groups of cantilever beams, each group of cantilever beams is composed of two symmetric cantilever beams, and the electric length of a CPW transmission line between the two cantilever beams at the central frequency 35GHz within a measured signal frequency range is lambda/4. The power is detected by a first direct heating type microwave power sensor; the frequency is detected by the direct heating type microwave power sensor by measuring the synthetic power of two paths of coupling signals with a phase difference of 90 degrees at the central frequency; and the phase detection is realized by separately synthesizing the two paths of coupling signals with the phase difference of 90 degrees at the central frequency with two paths of equally divided reference signals, and detecting the synthetic power by suing the direct heating type microwave power sensor to obtain the phase of a to-be-detected signal.

The invention discloses a silicon-based cantilever beam coupled direct-heating type millimeter-wave signal detecting instrument which is composed of a sensor module an analog/digital conversion module and a liquid crystal display module. The sensor module is composed of a cantilever beam coupled structure, a power divider/combiner, a direct-heating type microwave power sensor and a switch, a substrate material is high-resistance Si, and the power is detected by the direct-heating type microwave power sensor at a CPW signal line terminal corresponding to an input port; frequency detection is realized by measuring synthesis power of two paths of coupling signals with a phase difference of 90 degrees at the central frequency by utilizing the direct-heating type microwave power sensor; and phase detection is realized by respectively combining the two paths of the coupling signals with the phase difference of 90 degrees at the central frequency with two paths of equally divided reference signals, detecting the synthesis power by utilizing the direct-heating type microwave power sensor and obtaining the phase of a to-be-detected signal. The analog/digital conversion is realized by an MCS51 single-chip, and the liquid crystal display part is composed of three liquid crystal display screens.

The invention provides a dual-channel self-detection MEMS microwave power divider and a preparation method thereof. The dual-channel self-detection MEMS microwave power divider comprises a microwave power divider located on a gallium arsenide substrate, a thermoelectric MEMS microwave power sensor and three capacitive MEMS microwave power sensors. The microwave power divider is of a T-shaped symmetrical structure and comprises three ports, and an ACPS signal line is arranged in the middle of the microwave power divider. The thermoelectric MEMS microwave power sensor is located in an annular area formed by the ACPS signal line. Each capacitive MEMS microwave power sensor is connected with one of the ports through a CPW structure. By the capacitive MEMS microwave power sensors and the thermoelectric MEMS microwave power sensor, whether two ports of the MEMS microwave power divider are equally divided into microwave power or not or whether mismatch occurs or not can be detected on line inreal time through the capacitive channel and the thermoelectric channel; and the ratio of the microwave power at the input port to the microwave power at the output port is measured on line, so thatthe real-time on-line power self-detection of the MEMS microwave power divider is realized.

The invention discloses a state-controllable symmetric thermoelectric MEMS microwave standing wave meter, which is characterized in that a symmetric directional coupler is adopted to extract incidentmicrowave power and reflected microwave power to a coupling end and an isolation end of an upper branch and a lower branch respectively; a thermoelectric MEMS microwave power sensor is adopted to measure the power of each port of the two branches, more accurate incident microwave power and reflected microwave power can be obtained by averaging, and then the standing-wave ratio can be obtained. Thedesigned two branches can work independently to realize a measurement function, so that the failure rate is reduced; in order to realize a state switching function of the MEMS microwave standing wavemeter, an MEMS microwave switch is additionally arranged on an extraction branch of the MEMS microwave standing wave meter; and when the MEMS microwave switch is in an off state, the incident microwave power is not extracted any more and is directly transmitted to an output port, so that the loss of the microwave power when detection is not needed is reduced. The state-controllable symmetric thermoelectric MEMS microwave standing wave meter improves the reliability of the MEMS microwave standing wave meter, and has the characteristics of low loss, small chip area and compatibility with a gallium arsenide monolithic microwave integrated circuit process.

A low-power consumption power source detector based on an information system comprises a first capacitor, a second capacitor, a first resistor, a second resistor, a third resistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, a first PMOS transistor, a second PMOS transistor, a third PMOS transistor and a fourth PMOS transistor. The low-power consumption power source detector based on the information system cannot be influenced by a direct current supply voltage, and the power consumption is small, the frequency collecting range of a forward direction power source glitch voltage is wide.

The invention provides a clamped beam T-shaped junction direct heating type microwave signal detector. The clamped beam T-shaped junction direct heating type microwave signal detector is constituted by cascading a six-interface clamped beam coupler, a channel selection switch, a microwave frequency detector, a microwave phase detector and a direct heating type microwave power sensor; the coplanar waveguide length between two clamped beams is lambda/4; the power coupling from a first interface to a third interface and to a fourth interface and from the first interface to a fifth interface and to a sixth interface of the six-interface clamped beam coupler is the same respectively, and a signal to be detected is input through the first interface, is output to the direct heating type microwave power sensor through a second interface, is output to the microwave phase detector through the fourth interface and the sixth interface, and is output to the channel selection switch through the third interface and the fifth interface; a seventh interface and an eighth interface of the channel selection switch are connected to the direct heating type microwave power sensor, and a ninth interface and a tenth interface of the channel selection switch are connected to the microwave frequency detector; the purpose of simultaneously detecting the power, the phase and the frequency of a microwave signal through one chip is achieved.

The invention discloses an MEMS pressure sensor based on the frequency detection principle. A planar spiral inductor is adopted, an MEMS variable parallel plate capacitor is arranged on one side of the inductor, and an LC resonance circuit is formed; the MEMS capacitor is connected in parallel between the CPW signal line and the ground wire, an upper pole plate of the MEMS capacitor is the CPW signal line and is directly arranged on the MEMS film, a groove is formed in the substrate under the MEMS film, and a lower pole plate of the MEMS capacitor is positioned on the bottom surface of the groove and two side surfaces close to the ground wire and is connected with the ground wire; the two ends of the MEMS film are arranged on the ground wire and form a closed cavity with the groove. The external pressure intensity is sensed by utilizing the closed cavity, when the internal and external pressure difference of the closed cavity is changed, the MEMS film is bent to cause the capacitance between the upper pole plate and the lower pole plate of the MEMS capacitor to change, so the resonant frequency of an RF signal on the CPW transmission line is shifted, and the magnitude of the detection pressure can be represented by measuring the resonant frequency value.

The invention discloses a symmetric thermoelectric MEMS microwave standing wave meter, which is characterized in that signal lines of ACPS transmission lines at the two ends are symmetrically distributed on the upper side and the lower side of a main transmission line to form a symmetric directional coupler, and incident microwave power and reflected microwave power are extracted to a coupling endand an isolation end of an upper branch and a lower branch respectively; a thermoelectric MEMS microwave power sensor is connected to the tail end of each CPW transmission line of the upper branch and the tail end of each CPW transmission line of the lower branch respectively to measure the microwave power of each port of the two branches, the average value of the measured output thermal voltageis obtained, more accurate incident microwave power and reflected microwave power can be obtained, and then the standing-wave ratio is obtained. If one branch circuit stops working, the other branch can still work normally, that is, the MEMS microwave standing wave meter can still carry out measurement, so that the failure rate is reduced. According to the symmetric thermoelectric MEMS microwave standing wave meter, the reliability of the MEMS microwave standing wave meter is improved, and the MEMS microwave standing wave meter has the characteristics of zero direct-current power consumption and compatibility with a gallium arsenide monolithic microwave integrated circuit process due to adoption of a fully passive structure.

The silicon cantilever coupled T-junction indirectly-heating type millimeter wave signal detecting device comprises a sensor module, an analog-to-digital conversion module and a liquid crystal display module. The sensor module is composed of a cantilever coupled structure, a T-junction indirectly-heated type microwave power sensor and a switch. Substrate materials are high resistivity of silicon and the power are tested by the indirectly-heated type microwave power sensor through the CPW signal wire terminal corresponding to an input port. The frequency detecting are achieved by measuring the synthesis power of the two-branch coupling signal with 90 degrees phase difference in the central frequency using the indirectly-heated type millimeter wave power sensor; Phase detecting are achieved by compositing the reference signal of the equal division each to the two-branch coupling signal with 90 degrees phase difference in the central frequency, likewise, the synthesis power are measured by the indirect heating type microwave power sensor, thereby obtaining the phase to be measured. Analogue-to-digital conversion is achieved by the MCS51 single-chip, and the liquid crystal display is composed of three LCD screens.