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Directly Heated Millimeter-Wave Signal Detector Based on Silicon-Based Micromachined Cantilever T-junction

A technology of signal detectors and cantilever beams, applied in the field of micro-electro-mechanical systems, can solve the problems of large circuit size and achieve low cost, high reliability, simple principle and structure

Active Publication Date: 2018-04-03
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, currently existing microwave signal detectors, including power detectors, frequency detectors and phase detectors, are relatively independent devices, and in microwave systems where power, phase and frequency need to be measured simultaneously, independent devices The size of the circuit is relatively large, and there are electromagnetic compatibility problems at the same time, so the research on the integrated detection system of millimeter wave signals has become the trend of future development.

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  • Directly Heated Millimeter-Wave Signal Detector Based on Silicon-Based Micromachined Cantilever T-junction
  • Directly Heated Millimeter-Wave Signal Detector Based on Silicon-Based Micromachined Cantilever T-junction
  • Directly Heated Millimeter-Wave Signal Detector Based on Silicon-Based Micromachined Cantilever T-junction

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Embodiment Construction

[0023] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0024] see Figure 1-7 , the present invention proposes a directly heated millimeter-wave signal detector based on a silicon-based micromechanical cantilever T-junction. It mainly includes: cantilever beam coupling structure 13, T-junction, direct heating microwave power sensor and switch. Among them, the cantilever beam coupling structure 13 is used to couple part of the power of the signal to be measured for frequency and phase detection; the T-junction is a three-port device, which can be used for power distribution and power synthesis without isolation resistors; direct heating microwave power sensor It is used to detect the power of the microwave signal, the principle is based on the Joule effect and the Seebeck effect; the switch is used to switch between two states of coupling power detection and frequency detection.

[0025] The ca...

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Abstract

The silicon-based micromechanical cantilever beam T-junction direct heating millimeter wave signal detector of the present invention is composed of a cantilever beam coupling structure, a T-junction, a direct heating microwave power sensor and a switch. The cantilever beam coupling structure includes two sets of cantilever beams, each set of cantilever beams is composed of two symmetrical cantilever beams, and the electrical length of the CPW transmission line between the two cantilever beams is λ / 4 at the center frequency of 35GHz within the frequency range of the measured signal . The power is detected by the first direct heating microwave power sensor; the frequency detection is realized by using the direct heating microwave power sensor to measure the composite power of two coupled signals with a phase difference of 90 degrees at the center frequency; the phase detection is achieved by combining the two The coupled signal with a phase difference of 90 degrees at the center frequency is synthesized with two equally divided reference signals respectively, and the synthesized power is also detected by a direct heating microwave power sensor to obtain the phase of the signal to be measured.

Description

technical field [0001] The invention provides a direct heating millimeter-wave signal detector based on a silicon-based micromechanical cantilever beam T-junction, which belongs to the technical field of microelectromechanical systems (MEMS). Background technique [0002] Electromagnetic waves with a length of 1 to 10 millimeters are called millimeter waves, which are in the higher microwave frequency band and have important research value in communication, radar, guidance, remote sensing technology, radio astronomy, clinical medicine and spectroscopy. Power, frequency and phase are the three major parameters of microwave signals, and their detection is an important part of electromagnetic measurement, which plays a key role in the application of microwave technology. Based on the continuous development and maturity of MEMS technology, many electronic components and mechanical components have been successfully miniaturized, and their performance is no less than that of tradi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02H01L27/30
CPCB81B7/02H10K39/10
Inventor 廖小平严嘉彬
Owner SOUTHEAST UNIV
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